d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
1
Si1970DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
r
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.2 A
V
GS
= 2.5 V, I
D
= 0.29 A
V
DS
= 15 V, I
D
= 1.2 A
Min.
30
Typ.
Max.
Unit
V
25
- 3.2
0.6
1.6
± 100
1
10
4
0.185
0.285
2.5
95
0.225
0.345
mV/°C
V
ns
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 1.4 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.4 A
f = 1 MHz
V
DD
= 15 V, R
L
= 13.6
Ω
I
D
≅
1.1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
17
9
2.5
1.15
0.4
0.3
4
9
20
15
15
5
15
30
25
25
10
15
15
12
1
4
0.85
20
10
16.5
3.5
1.2
40
20
3.8
1.7
pF
nC
Ω
ns
V
DD
= 15 V, R
L
= 13.6
Ω
I
D
≅
1.1 A, V
GE
N = 10 V, R
g
= 1
Ω
10
10
6
T
C
= 25 °C
I
S
= 1.1 A, V
GS
= 0 V
A
V
ns
nC
ns
I
F
= 1.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4
V
GS
= 5
V
thru 3.5
V
V
GS
= 3
V
I
D
- Drain C
u
rrent (A)
1.6
2.0
3
I
D
- Drain C
u
rrent (A)
1.2
2
V
GS
= 2.5
V
1
V
GS
= 2
V
V
GS
= 1.5
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
0.0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.6
150
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.5
C - Capacitance (pF)
120
C
iss
90
0.4
V
GS
= 2.5
V
0.3
V
GS
= 4.5
V
0.2
60
C
oss
30
C
rss
0.1
0
1
2
I
D
- Drain Current (A)
3
4
0
0
5
10
15
20
25
30
V
DS
- Drain-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 1.4 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
R
DS(on)
- On-Resistance
V
DS
= 15
V
6
V
DS
= 24
V
4
1.6
1.8
Capacitance
V
GS
= 4.5
V,
I
D
= 1.4 A
1.4
(
N
ormalized)
1.2
V
GS
= 2.5
V,
I
D
= 0.3 A
1.0
2
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.8
I
D
= 1.4 A
R
DS(on)
- On-Resistance (Ω)
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
0.6
1.0
T
J
= 25 °C
T
A
= 125 °C
0.4
0.2
T
A
= 25 °C
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Forward Diode Voltage
1.5
5
On-Resistance vs. Gate-Source Voltage
1.3
I
D
= 250
µA
Po
w
er (
W
)
V
G S(th)
(
V
)
1.1
4
3
0.9
2
0.7
1
0.5
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
Single Pulse Power
100
µs
I
D
- Drain C
u
rrent (A)
1
1 ms
10 ms
0.1
100 ms
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
1 s, 10 s
DC
BVDSS Limited
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
1.4
1.2
1.6
Po
w
er Dissipation (
W
)
I
D
- Drain C
u
rrent (A)
Package Limited
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
0.0
25
50
75
100
125
150
0.8
0.4
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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