Si1922EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
S
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
20
±8
1.3
a
1.3
a
1.3
a, b, c
1.2
b, c
4
1.0
0.61
b, c
1.25
0.8
0.74
b, c
0.47
b, c
- 55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
t
5s
Steady State
R
thJA
R
thJF
Typical
130
80
Maximum
170
100
Unit
°C/W
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 67192
S10-2766-Rev. A, 29-Nov-10
www.vishay.com
1
Si1922EDH
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.2 A, V
GS
= 0 V
0.8
9
2
5
4
T
C
= 25 °C
1
4
1.2
18
4
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
tr
t
d(off)
tr
V
DD
= 10 V, R
L
= 8.3
I
D
1.2 A, V
GEN
= 8 V, R
g
= 1
V
DD
= 10 V, R
L
= 8.3
I
D
1.2 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1.5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.5 A
1.6
0.9
0.1
0.2
1.9
43
80
480
220
22
46
645
215
3.8
65
120
720
330
33
70
968
323
ns
k
2.5
1.8
nC
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1 A
V
GS
= 2.5 V, I
D
= 1 A
V
GS
= 1.8 V, I
D
= 0.2 A
V
DS
= 4 V, I
D
= 1.5 A
Min.
20
Typ.
Max.
Unit
V
20
- 2.3
0.4
1
± 25
1
1
10
4
0.165
0.187
0.210
4
0.198
0.225
0.263
mV/°C
V
µA
µA
A
S
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67192
S10-2766-Rev. A, 29-Nov-10
Si1922EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.5
10
-3
10
-4
0.4
I
G
- Gate Current (mA)
I
G
- Gate Current (A)
10
-5
10
-6
10
-7
10
-8
10
-9
0
0
3
6
9
12
15
10
-10
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
T
J
= 150 °C
0.3
T
J
= 25 °C
0.2
T
J
= 25 °C
0.1
Gate Current vs. Gate-to-Source Voltage
4
1.0
Gate Current vs. Gate-to-Source Voltage
V
GS
= 5 V thru 2 V
3
I
D
- Drain Current (A)
I
D
- Drain Current (A)
0.8
V
GS
= 1.5 V
2
0.6
T
C
= 25 °C
0.4
T
C
= 125 °C
0.2
1
V
GS
= 1 V
0
0.0
0.0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.25
8
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.22
V
GS
= 1.8 V
V
GS
- Gate-to-Source Voltage (V)
I
D
= 1.5 A
6
V
DS
= 10 V
V
DS
= 5 V
4
V
DS
= 16 V
0.19
V
GS
= 2.5 V
V
GS
= 4.5 V
0.16
2
0.13
0
1
2
I
D
- Drain Current (A)
3
4
0
0.0
0.5
1.0
1.5
2.0
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 67192
S10-2766-Rev. A, 29-Nov-10
www.vishay.com
3
Si1922EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.7
I
D
= 1 A
1.5
R
DS(on)
- On-Resistance
100
V
GS
= 2.5 V
1.3
V
GS
= 4.5 V
1.1
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
10
(Normalized)
0.9
0.7
- 50
1
- 25
0
25
50
75
100
125
150
0.0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.4
I
D
= 1 A
R
DS(on)
- On-Resistance (Ω)
Source-Drain Diode Forward Voltage
0.80
0.3
T
J
= 125 °C
V
GS(th)
(V)
0.65
I
D
= 250 μA
0.2
0.50
T
J
= 25 °C
0.1
0.35
0.0
1
2
3
4
5
0.20
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
5
Threshold Voltage
10
Limited by R
DS(on)*
4
I
D
- Drain Current (A)
100 μs
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
DC
BVDSS Limited
Power (W)
3
2
1
T
A
= 25 °C
Single Pulse
0
0.01
0.1
1
Time (s)
10
100
600
0.01
0.1
1
10
100
Single Pulse Power, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 67192
S10-2766-Rev. A, 29-Nov-10
Si1922EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.4
1.8
I
D
- Drain Current (A)
Package Limited
1.2
0.6
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
1.5
0.75
1.2
0.60
Power (W)
0.6
Power (W)
0.9
0.45
0.30
0.3
0.15
0.0
0
25
50
75
100
125
150
0.00
0
25
50
75
100
125
150
T
F
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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