Si1903DL
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.995 @ V
GS
= -4.5 V
-20
1.190 @ V
GS
= -3.6 V
1.80 @ V
GS
= -2.5 V
I
D
(A)
"0.44
"0.40
"0.32
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
QA
G
1
2
5
G
2
XX
YY
Lot Traceability
and Date Code
Part # Code
D
2
3
4
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
-0.25
0.30
0.16
-55 to 150
Symbol
V
DS
V
GS
5 secs
Steady State
-20
"12
Unit
V
"0.44
"0.31
"1.0
"0.41
"0.30
A
-0.23
0.27
0.14
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71081
S-21374—Rev. B, 12-Aug-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
C/W
2-1
Si1903DL
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= -16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= -5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -0.41 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -3.6 V, I
D
= -0.38 A
V
GS
= -2.5 V, I
D
= -0.25 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= -10 V, I
D
= -0.41 A
I
S
= -0.23 A, V
GS
= 0 V
-1.0
0.850
1.0
1.4
0.8
-0.8
-1.2
0.995
1.190
1.80
S
V
W
-0.6
"100
-1
-5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -0.23 A, di/dt = 100 A/ms
V
DD
= -10 V, R
L
= 20
W
I
D
^
-0.5 A, V
GEN
= -4.5 V, R
G
= 6
W
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -0.41 A
1.2
0.45
0.25
7.5
20
8.5
12
25
15
40
17
24
40
ns
1.8
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 5 thru 3 V
0.8
I
D
- Drain Current (A)
2.5 V
I
D
- Drain Current (A)
0.8
1.0
Transfer Characteristics
T
C
= -55_C
25_C
0.6
0.6
125_C
0.4
0.4
2V
0.2
1V
0.0
0.0
1.5 V
0.2
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71081
S-21374—Rev. B, 12-Aug-02
www.vishay.com
2-2
Si1903DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
3.0
r
DS(on)
- On-Resistance (
W
)
100
Capacitance
2.5
C - Capacitance (pF)
80
C
iss
2.0
V
GS
= 2.5 V
1.5
V
GS
= 3.6 V
1.0
V
GS
= 4.5 V
0.5
60
40
C
oss
20
C
rss
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 0.41 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 0.41 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
0.6
0.8
1.0
1.2
1.4
1.2
2
1.0
1
0.8
0
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1
3.0
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
2.5
I
S
- Source Current (A)
2.0
I
D
= 0.41 A
T
J
= 150_C
1.5
T
J
= 25_C
1.0
0.5
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71081
S-21374—Rev. B, 12-Aug-02
www.vishay.com
2-3
Si1903DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
5
Single Pulse Power
0.3
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
Power (W)
4
3
0.1
2
0.0
1
-0.1
-0.2
-50
-25
0
25
50
75
100
125
150
0
10
- 3
10
- 2
10
- 1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 400_C/W
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
2-4
Document Number: 71081
S-21374—Rev. B, 12-Aug-02
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