The Si1869DH includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1869DH operates on
supply lines from 1.8 V to 20 V, and can drive loads up to
1.2 A.
APPLICATIONS
• Level Shift for Portable Devices
APPLICATION CIRCUITS
Si1869DH
40
t
f
35
4
V
IN
Q2
6
6
Time (μs)
R1
C1
25
20
15
5
ON/OFF
Q1
5
C
i
1
R2
R2
GND
0
0
2
4
R2 (kΩ)
Note: For R2 switching variations with other V
IN
/R1
combinations see Typical Characteristics
6
8
10
t
r
t
d(on)
C
o
LOAD
10
t
d(off)
2,
3
V
OUT
30
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 μF
C
o
= 1 μF
Switching Variation
R2 at V
IN
= 2.5 V, R1 = 20 k
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 k
to 1 M *
Typical 0 to 100 k *
Typical 1000 pF
The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
www.vishay.com
1
Si1869DH
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
SC70-6
Top View
S2
R2
1
6
R1, C1
Marking Code
VC
D2
3
4
S2
XX
YY
5
ON/OFF
Q2
6
D2
2
5
ON/OFF
R1,
C1
Q1
4
Si1869DH
2,
3
D2
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si1869DH-T1-E3 (Lead (Pb)-free)
Si1869DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
1
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage (D2-S2)
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
)
Continuous
Pulsed
b, c
a, b
Symbol
V
DS
V
IN
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
- 20
20
8
± 1.2
±3
- 0.4
1.0
- 55 to 150
2
Unit
V
A
W
°C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJF
Typical
100
44
Maximum
125
55
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C unless otherwise noted
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
ON Characteristics
Input Voltage Range
Drain to Source Breakdown Voltage
V
IN
V
DS
R
DS(on)
V
GS
= 0 V, I
D
= - 250 μA
V
ON/OFF
= 1.5 V, V
IN
= 4.5 V, I
D
= 1.2 A
On-Resistance (P-Channel) at 1 A
V
ON/OFF
= 1.5 V, V
IN
= 2.5 V, I
D
= 1.0 A
V
ON/OFF
= 1.5 V, V
IN
= 1.8 V, I
D
= 0.7 A
On-State (P-Channel) Drain-Current
Notes:
a. Surface mounted on FR4 board.
b. V
IN
= 20 V, V
ON/OFF
= 8 V, T
A
= 25 °C.
c. Pulse test: pulse width 300 μs, duty cycle
I
D(on)
V
IN-OUT
V
IN-OUT
0.2 V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
0.3 V, V
IN
= 3 V, V
ON/OFF
= 1.5 V
1
1
1.8
- 20
0.132
0.177
0.242
0.165
0.222
0.303
A
20
V
I
FL
V
SD
V
IN
= 8 V, V
ON/OFF
= 0 V
I
S
= - 0.4 A
0.4
0.6
1
1.1
μA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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