Si1867DL
New Product
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
1.8 to 8
r
DS(on)
(W)
0.600 @ V
IN
= 4.5 V
0.850 @ V
IN
= 2.5 V
1.200 @ V
IN
= 1.8 V
FEATURES
I
D
(A)
"0.6
"0.5
"0.4
D
D
D
D
D
D
TrenchFETr Power MOSFET
Lead Free
600-mW Low r
DS(on)
1.8- to 8-V Input
1.5- to 8-V Logic Level Control
Lead Free
APPLICATIONS
D
Load Switch with Level-Shift for Portable
Applications
DESCRIPTION
The Si1867DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
the p-channel load-switch. The n-channel MOSFET has
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1867DL operates on supply lines from 1.8
to 8 V, and can drive loads up to 0.6 A.
APPLICATION CIRCUITS
Si1867DL
2, 3
V
OUT
Q2
6
6
C1
Time (
mS)
12
10
8
6
4
2
C
i
1
R2
R2
GND
0
0
2
4
R2 (kW)
Note: For R2 switching variations with other V
IN
/R1
combinations See Typical Characteristics
6
8
10
t
d(off)
Switching Variation
R2 @ V
IN
=
2.5
V, R1 =
20
kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
4
V
IN
R1
t
f
ON/OFF
5
Q1
C
o
LOAD
t
d(on)
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
Typical 1000 pF
The Si1867DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
www.vishay.com
1
Si1867DL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
SC70-6
Si1867DL
4
S2
6
5
R1, C1
6
ON/OFF
5
Q1
R1, C1
Q2
2, 3
D2
New Product
Top View
R2
1
D2
2
D2
3
4
S2
ON/OFF
Ordering Information: Si1867DL-T1-E3
R2
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
W)
Continuous
a, b
Pulsed
b, c
Symbol
V
IN
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
8
8
"0.6
"3
−0.4
0.4
−55
to 150
2
Unit
V
A
W
_C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (continuous current)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJF
Typical
260
190
Maximum
320
230
Unit
_C/W
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
V
IN
= 8 V, V
ON/OFF
= 0 V
I
S
=
−0.4
A
0.85
1
1.1
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
ON Characteristics
Input Voltage Range
V
IN
V
ON/OFF
= 1.5 V, V
IN
= 4.5 V, I
D
= 0.6 A
On-Resistance (p-channel) @ 1 A
r
DS(on)
( )
V
ON/OFF
= 1.5 V, V
IN
= 2.5 V, I
D
= 0.5 A
V
ON/OFF
= 1.5 V, V
IN
= 1.8 V, I
D
= 0.4 A
On-State (p-channel) Drain-Current
On State (p channel) Drain Current
I
D( )
D(on)
V
IN-OUT
v
0.2 V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
V
IN-OUT
v
0.3 V, V
IN
= 3 V, V
ON/OFF
= 1.5 V
1
1
1.8
0.480
0.690
0.950
8
0.600
0.850
1.200
A
W
V
Notes
a. Surface Mounted on FR4 Board.
b. V
IN
= 8 V, V
ON/OFF
= 8 V, T
A
= 25_C.
c. Pulse test: pulse width
v300
ms,
duty cycle
v2%.
www.vishay.com
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
2
Si1867DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
2.0
V
GS
= 5 thru 3 V
1.6
I
D
−
Drain Current (A)
2.5 V
I
D
−
Drain Current (A)
1.6
T
C
=
−55_C
2.0
Vishay Siliconix
Transfer Characteristics
1.2
2V
1.8 V
1.5 V
1.2
25_C
0.8
0.8
125_C
0.4
0.4
1V
0.0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
−
Gate-to-Source Voltage (V)
1.5
On-Resistance vs. Drain Current
V
DROP
vs. I
L
@ V
IN
=
4.5
V
V
ON/OFF
= 1.5 to 8 V
r
DS(on)
−
On-Resistance (
W
)
1.6
V
GS
= 1.8 V
1.2
V
GS
= 2.5 V
0.8
V
GS
= 4.5 V
0.4
V
DROP
(V)
1.2
0.9
T
J
= 125_C
0.6
T
J
= 25_C
0.3
0.0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.0
0.4
0.8
I
L
−
(A)
1.2
1.6
2.0
I
D
−
Drain Current (A)
V
DROP
vs. I
L
@ V
IN
=
2.5
V
2.5
V
ON/OFF
= 1.5 to 8 V
2.0
V
DROP
(V)
1.5
V
DROP
vs. I
L
@ V
IN
= 1.8 V
V
ON/OFF
= 1.5 to 8 V
1.2
V
DROP
(V)
1.5
T
J
= 125_C
1.0
T
J
= 25_C
0.9
T
J
= 125_C
0.6
T
J
= 25_C
0.3
0.5
0.0
0.0
0.4
0.8
I
L
−
(A)
1.2
1.6
0.0
0.0
0.2
0.4
0.6
I
L
−
(A)
0.8
1.0
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
www.vishay.com
3
Si1867DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.6
2.0
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
−
On-Resistance (
W)
(Normalized)
1.2
V
GS
= 4.5 V
I
D
= 0.6 A
r
DS(on)
−
On-Resistance (
W
)
1.4
1.6
1.2
I
D
= 0.2 A
0.8
I
D
= 0.6 A
1.0
0.8
V
GS
= 2.5 V
I
D
= 0.5 A
0.6
−50
−25
0
25
50
75
100
125
150
0.4
0.0
0
1
2
3
4
5
T
J
−
Junction Temperature (_C)
V
GS
−
Gate-to-Source Voltage (V)
14
12
10
Time (
mS)
8
6
4
2
0
0
Switching Variation
R2 @ V
IN
=
4.5
V, R1 =
20
kW
t
f
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
12
10
8
Time (
mS)
6
4
2
0
Switching Variation
R2 @ V
IN
=
2.5
V, R1 =
20
kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
t
f
t
d(off)
t
r
t
d(on)
t
d(off)
t
d(on)
2
4
R2 (kW)
6
8
10
0
2
4
R2 (kW)
6
8
10
12
10
8
Time (
mS)
Switching Variation
R2 @ V
IN
= 1.8 V, R1 =
20
kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
80
Switching Variation
R2 @ V
IN
=
4.5
V, R1 =
300
kW
t
d(off)
64
t
f
t
f
Time (
mS)
48
6
4
2
0
0
2
4
R2 (kW)
6
8
32
t
d(off)
16
t
d(on)
0
0
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
t
d(on)
20
40
R2 (kW)
60
80
100
www.vishay.com
4
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
Si1867DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
50
t
d(off)
40
Time (
mS)
Time (
mS)
30
20
10
0
0
20
40
60
R2 (kW)
80
100
Vishay Siliconix
Switching Variation
R2 @ V
IN
=
2.5
V, R1 =
300
kW
t
f
70
60
50
40
30
20
10
0
0
Switching Variation
R2 @ V
IN
= 1.8 V, R1 =
300
kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
t
d(off)
t
f
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
t
d(on)
t
d(on)
20
40
R2 (kW)
60
80
100
10
Safe Operating Area, Junction-to-Ambient
I
D
−
Drain Current (A)
1
Limited
by r
DS(on)
1 ms
10 ms
100 ms
0.1
1s
10 s
dc
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=400_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
www.vishay.com
5
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