* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71416
S-80257-Rev. C, 04-Feb-08
www.vishay.com
1
New Product
Si1563EDH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 100 µA
V
DS
= V
GS
, I
D
= - 100 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 1.13 A
V
GS
= - 4.5 V, I
D
= - 0.88 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 0.99 A
V
GS
= - 2.5 V, I
D
= - 0.71 A
V
GS
= 1.8 V, I
D
= 0.20 A
V
GS
= - 1.8 V, I
D
= - 0.20 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 0.88 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.13 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 20
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 20
Ω
I
D
≅
- 0.5 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.65
1.2
0.2
0.3
0.23
0.3
45
150
85
480
350
840
210
850
70
230
130
720
530
1200
320
1200
ns
1.0
1.8
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 1.13 A
V
DS
= - 10 V, I
D
= - 0.88 A
I
S
= 0.48 V, V
GS
= 0 V
I
S
= - 0.48 V, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
-2
0.220
0.400
0.281
0.610
0.344
0.850
2.6
1.5
0.8
- 0.8
1.2
- 1.2
0.280
0.490
0.360
0.750
0.450
1.10
S
V
Ω
0.45
- 0.45
±1
±1
± 10
± 10
1
-1
5
-5
A
µA
V
µA
mA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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