Si1563DH
New Product
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
FEATURES
r
DS(on)
(W)
0.280 @ V
GS
= 4.5 V
0.360 @ V
GS
= 2.5 V
0.450 @ V
GS
= 1.8 V
0.490 @ V
GS
= -4.5 V
I
D
(A)
1.28
1.13
1.00
-1.00
-0.81
-0.67
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
Thermally Enhanced SC-70 Package
D
Fast Switching
APPLICATIONS
D
Load Switch for Portable Devices
P-Channel
-20
0.750 @ V
GS
= -2.5 V
1.10 @ V
GS
= -1.8 V
D
1
S
2
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
EB
G
1
2
5
G
2
XX
YY
G
1
Lot Traceability
and Date Code
Part # Code
S
1
N-Channel
Top View
D
2
P-Channel
G
2
D
2
3
4
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 85_C
I
D
I
DM
I
S
0.61
0.74
0.38
P-Channel
5 secs
Steady State
-20
"8
V
-0.88
-0.63
-3.0
A
-0.48
0.57
0.3
W
_C
Symbol
V
DS
V
GS
5 secs
Steady State
20
"8
Unit
1.28
0.92
4.0
1.13
0.81
- 1.00
-0.72
0.48
0.57
0.30
-55 to 150
-0.61
0.30
0.16
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum
Junction-to-Ambient
a
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
130
170
80
Maximum
170
220
100
Unit
_C/W
C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
www.vishay.com
1
Si1563DH
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 100
mA
V
DS
= V
GS
, I
D
= -100
mA
V
DS
= 0 V, V
GS
=
"8
V
"
V
DS
= 16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85_C
On-State Drain Current
a
V
DS
w
5 V, V
GS
= 4.5 V
I
D(on)
V
DS
p
-5 V, V
GS
= -4.5 V
V
GS
= 4.5 V, I
D
= 1.13 A
V
GS
= -4.5 V, I
D
= -0.88 A
Drain-Source On-State Resistance
a
V
GS
= 2.5 V, I
D
= 0.99 A
r
DS(on)
V
GS
= -2.5 V, I
D
= -0.71 A
V
GS
= 1.8 V, I
D
= 0.20 A
V
GS
= -1.8 V, I
D
= -0.20 A
Forward Transconductance
a
V
DS
= 10 V, I
D
= 1.13 A
g
fs
V
DS
= -10 V, I
D
= -0.88 A
I
S
= 0.48 A, V
GS
= 0 V
V
SD
I
S
= -0.48 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
-2
0.220
0.400
0.281
0.610
0.344
0.850
2.6
1.5
0.8
-0.8
1.2
-1.2
V
S
0.280
0.490
0.360
0.750
0.450
1.10
W
A
0.45
-0.45
1
V
1
"100
"100
1
-1
5
-5
mA
m
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.13 A
Gate-Source Charge
Q
gs
P-Channel
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -0.88 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 20
W
I
D
^
0.5 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= -10 V, R
L
= 20
W
I
D
^
-0.5 A, V
GEN
= -4.5 V, R
G
= 6
W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
t
f
P-Ch
I
F
= 0.48 A, di/dt = 100 A/ms
m
N-Ch
P-Ch
1.25
1.2
0.21
nC
0.3
0.3
0.21
15
18
22
25
25
15
12
12
30
30
25
30
35
40
40
25
20
20
60
60
ns
2
1.8
Gate-Drain Charge
Q
gd
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Reverse Recovery Time
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
2.0
V
GS
= 5 thru 2 V
2.0
T
C
= -55_C
1.5
I
D
- Drain Current (A)
1.5 V
25_C
Vishay Siliconix
N−CHANNEL
Transfer Characteristics
1.5
I
D
- Drain Current (A)
125_C
1.0
1.0
0.5
1V
0.0
0
1
2
3
4
0.5
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
160
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.5
C - Capacitance (pF)
120
C
iss
80
0.4
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0.3
0.2
40
0.1
C
rss
0.0
0.0
0
0.5
1.0
I
D
- Drain Current (A)
1.5
2.0
0
4
C
oss
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 1.28 A
1.6
On-Resistance vs. Junction Temperature
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
4
1.4
V
GS
= 4.5 V
I
D
= 1.13 A
1.2
2
1.0
1
0.8
0
0.0
0.3
0.6
0.9
1.2
1.5
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
www.vishay.com
3
Si1563DH
Vishay Siliconix
New Product
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.6
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
1
I
S
- Source Current (A)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
2
0.5
0.4
I
D
= 1.13 A
0.3
T
J
= 25_C
0.2
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.2
I
D
= 100
mA
5
Single Pulse Power, Junction-to-Ambient
0.1
V
GS(th)
Variance (V)
4
-0.0
Power (W)
3
-0.1
2
-0.2
1
-0.3
-0.4
-50
-25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Ambient
10
I
DM
Limited
r
DS(on)
Limited
I
D
- Drain Current (A)
1
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
P(t) = 1
P(t) = 10
dc
P(t) = 0.0001
P(t) = 0.001
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
4
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
N−CHANNEL
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
2. Per Unit Base = R
thJA
= 170_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
www.vishay.com
5
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