Si1551DL
Vishay Siliconix
Complementary 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
R
DS(on)
(Ω)
1.9 at V
GS
= 4.5 V
3.7 at V
GS
= 2.7 V
4.2 at V
GS
= 2.5 V
0.995 at V
GS
= - 4.5 V
P-Channel
- 20
1.600 at V
GS
= - 2.7 V
1.800 at V
GS
= - 2.5 V
I
D
(A)
0.30
0.22
0.21
- 0.44
- 0.34
- 0.32
0.52
0.72
Q
g
(Typ.)
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
RD
XX
YY
Lot Traceability
and Date Code
Part # Code
Top
View
Ordering Information:
Si1551DL-T1-E3 (Lead (Pb)-free)
Si1551DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
1
2
5
G
2
D
2
3
4
S
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.25
0.30
0.16
0.30
0.22
0.6
0.23
0.27
0.14
- 0.25
0.30
0.16
- 55 to 150
0.29
0.21
5s
Steady State
20
± 12
- 0.44
- 0.31
- 1.0
- 0.23
0.27
0.14
W
°C
- 0.41
- 0.30
A
5s
P-Channel
Steady State
- 20
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
360
400
300
Maximum
415
460
350
°C/W
Unit
Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
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1
Si1551DL
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 0.29 A
V
GS
= - 4.5 V, I
D
= - 0.41 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.7 V, I
D
= 0.1 A
V
GS
= - 2.7 V, I
D
= - 0.25 A
V
GS
= 2.5 V, I
D
= 0.1 A
V
GS
= - 2.5 V, I
D
= - 0.25 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 0.41 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.29 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 20
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 20
Ω
I
D
≅
- 0.5 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= 0.23 A, dI/dt = 100 A/µs
I
F
= - 0.23 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.72
0.52
0.22
0.11
0.13
0.14
23
7.5
30
20
10
8.5
15
12
20
25
40
15
60
40
20
17
30
24
40
40
ns
1.5
1.8
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 0.29 A
V
DS
= - 10 V, I
D
= - 0.41 A
I
S
= 0.23 A, V
GS
= 0 V
I
S
= - 0.23 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
- 1.0
1.55
0.850
2.8
1.23
3.0
1.4
0.3
0.8
0.8
- 0.8
1.2
- 1.2
1.9
0.995
3.7
1.600
4.2
1.800
S
V
Ω
0.6
- 0.6
1.5
- 1.5
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
Si1551DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.6
V
GS
= 5
V
thru 3.5
V
0.5
3
V
I
D
- Drain Current (A)
0.4
I
D
- Drain Current (A)
0.4
25 °C
125 °C
0.3
0.6
T
C
= - 55 °C
0.5
0.3
2.5
V
0.2
2
V
0.1
1.5
V
0.0
0.0
0.2
0.1
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
6
100
Transfer Characteristics
5
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 2.5
V
4
V
GS
= 2.7
V
3
V
GS
= 4.5
V
2
80
C
iss
60
40
C
oss
20
1
C
rss
0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
V
DS
= 10
V
I
D
= 0.29 A
4
R
DS(on)
- On-Resistance
(Normalized)
1.8
V
GS
= 4.5
V
I
D
= 0.29 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
1.6
1.4
3
1.2
2
1.0
1
0.8
0
0.0
0.2
0.4
0.6
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
www.vishay.com
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Si1551DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
6
5
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
4
I
D
= 0.29 A
3
T
J
= 150 °C
2
T
J
= 25 °C
0.1
0.0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.2
5
On-Resistance vs. Gate-to-Source Voltage
0.1
I
D
= 250
µA
V
GS(th)
Variance
(V)
Power (W)
0.0
4
3
- 0.1
2
- 0.2
1
- 0.3
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Junction Temperature (°C)
Threshold Voltage
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 400 °C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
Si1551DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.0
V
GS
= 5
V
thru 3
V
T
C
= - 55 °C
0.8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.5
V
0.6
0.8
25 °C
125 °C
0.6
1.0
0.4
2
V
0.2
1
V
0.0
0.0
1.5
V
0.4
0.2
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
3.0
100
Transfer Characteristics
2.5
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
80
C
iss
2.0
V
GS
= 2.5
V
1.5
V
GS
= 2.7
V
60
40
C
oss
1.0
V
GS
= 4.5
V
0.5
20
C
rss
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
Capacitance
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