Si1551DL
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
1.9 @ V
GS
= 4.5 V
3.7 @ V
GS
= 2.7 V
4.2 @ V
GS
= 2.5 V
0.995 @ V
GS
=
−4.5
V
1.600 @ V
GS
=
−2.7
V
1.800 @ V
GS
=
−2.5
V
I
D
(A)
0.30
0.22
0.21
−0.44
−0.34
−0.32
Qg (Typ)
0.72
P-Channel
−20
0.52
SOT-363
SC-70 (6-LEADS)
S
1
G
1
D
2
1
6
5
D
1
Marking Code
YY
Lot Traceability
and Date Code
Part # Code
2
G
2
S
2
RD
XX
3
4
Top View
Ordering Information: Si1551DL-T1
Si1551DL-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
P-Channel
5 secs
Steady State
−20
"12
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
Steady State
20
Unit
V
0.30
0.22
0.6
0.25
0.30
0.16
0.29
0.21
−0.44
−0.31
−1.0
−0.41
−0.30
A
0.23
0.27
0.14
−55
to 150
−0.25
0.30
0.16
−0.23
0.27
0.14
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
C/W
1
Si1551DL
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
−20
V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85_C
V
DS
=
−20
V, V
GS
= 0 V, T
J
= 85_C
On-State
On State Drain Current
a
I
D( )
D(on)
V
DS
w
5 V, V
GS
= 4.5 V
V
DS
p
−5
V, V
GS
=
−4.5
V
V
GS
= 4.5 V, I
D
= 0.29 A
V
GS
=
−4.5
V, I
D
=
−0.41
A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
= 2.7 V, I
D
= 0.1 A
V
GS
=
−2.7
V, I
D
=
−0.25
A
V
GS
= 2.5 V, I
D
= 0.1 A
V
GS
=
−2.5
V, I
D
=
−0.25
A
Forward Transconductance
a
g
f
fs
V
SD
V
DS
= 10 V, I
D
= 0.29 A
V
DS
=
−10
V, I
D
=
−0.41
A
I
S
= 0.23 A, V
GS
= 0 V
I
S
=
−0.23
A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
−1.0
1.55
0.850
2.8
1.23
3.0
1.4
0.3
0.8
0.8
−0.8
1.2
−1.2
1.9
0.995
3.7
1.600
4.2
1.800
S
W
0.6
−0.6
1.5
−1.5
"100
"100
1
−1
5
−5
A
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body
Gate Body Leakage
I
GSS
nA
Diode Forward Voltage
a
V
Dynamic
b
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.29 A
P-Channel
V
DS
=
−10
V V
GS
=
−4.5
V I
D
=
−0.41
A
10 V,
4 5 V,
0 41
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
V
DD
= 10 V, R
L
= 20
W
I
D
^
0.5 A, V
GEN
= 4.5 V, R
g
= 6
W
P-Channel
V
DD
=
−10
V, R
L
= 20
W
10 V
I
D
^
−0.5
A, V
GEN
=
−4.5
V, R
g
= 6
W
0.5
4.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
F
= 0.23 A, di/dt = 100 A/ms
I
F
=
−0.23
A, di/dt = 100 A/ms
N-Ch
P-Ch
0.72
0.52
0.22
0.11
0.13
0.14
23
7.5
30
20
10
8.5
15
12
20
25
40
15
60
40
20
17
30
24
40
40
ns
1.5
1.8
nC
Gate-Source
Gate Source Charge
Q
gs
Q
gd
d
t
d( )
d(on)
t
r
t
d( ff)
d(off)
t
f
t
rr
Gate-Drain
Gate Drain Charge
Turn-On
Turn On Delay Time
Rise Time
Turn-Off
Turn Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
2
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
0.6
0.5
I
D
−
Drain Current (A)
0.4
0.3
0.2
2V
0.1
1.5 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 5 thru 3.5 V
3V
I
D
−
Drain Current (A)
0.4
0.3
125_C
0.2
0.1
25_C
0.6
0.5
T
C
=
−55_C
N−CHANNEL
Transfer Characteristics
2.5 V
V
DS
−
Drain-to-Source Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
r
DS(on)
−
On-Resistance (
W
)
5
4
3
2
1
0
0.0
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 2.7 V
C
−
Capacitance (pF)
100
Capacitance
80
C
iss
60
40
C
oss
20
C
rss
0
0.1
0.2
0.3
0.4
0.5
0.6
0
4
8
12
16
20
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 0.29 A
4
r
DS(on)
−
On-Resiistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 0.29 A
3
2
1
0
0.0
0.2
0.4
0.6
0.8
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
www.vishay.com
3
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1
6
5
4
3
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
I
D
= 0.29 A
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
T
J
= 25_C
0.1
0.0
Threshold Voltage
0.2
5
r
DS(on)
−
On-Resistance (
W
)
I
S
−
Source Current (A)
Single Pulse Power
0.1
V
GS(th)
Variance (V)
4
I
D
= 250
mA
Power (W)
3
−0.0
−0.1
2
−0.2
1
−0.3
−50
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=400_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
Si1551DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
N−CHANNEL
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 5 thru 3 V
0.8
I
D
−
Drain Current (A)
2.5 V
I
D
−
Drain Current (A)
0.8
1.0
P−CHANNEL
Transfer Characteristics
T
C
=
−55_C
25_C
0.6
0.6
125_C
0.4
0.4
2V
0.2
1V
0.0
0.0
1.5 V
0.2
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
−
Drain-to-Source Voltage (V)
3.0
r
DS(on)
−
On-Resistance (
W
)
2.5
2.0
1.5
1.0
0.5
0.0
0.0
V
GS
= 4.5 V
C
−
Capacitance (pF)
V
GS
−
Gate-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
Capacitance
80
C
iss
V
GS
= 2.5 V
V
GS
= 2.7 V
60
40
C
oss
20
C
rss
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
−
Drain Current (A)
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
5
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