Si1539CDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Source-Drain Current Diode Current
Pulsed Drain Current
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
S
I
DM
I
D
Symbol
V
DS
V
GS
0.7
0.6
0.7
b, c
0.5
b, c
0.3
0.2
b, c
2
0.34
0.22
0.29
b, c
0.18
b, c
- 55 to 150
N-Channel
30
± 20
- 0.5
- 0.4
- 0.4
b, c
- 0.4
b, c
- 0.3
- 0.2
b, c
-1
0.34
0.22
0.29
b, c
0.18
b, c
°C
W
A
P-Channel
- 30
Unit
V
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJF
Typ.
365
308
Max.
438
370
P-Channel
Typ.
365
308
Max.
438
370
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel).
Document Number: 67469
S11-0238-Rev. A, 14-Feb-11
www.vishay.com
1
Si1539CDL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
V
DS
= -5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 0.6 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 0.4 A
V
GS
= 4.5 V, I
D
= 0.1A
V
GS
= - 4.5 V, I
D
= - 0.1 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 0.6 A
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 0.4 A
N-Channel
V
DS
= 15 V, V
GS
= 4.5 V I
D
= 0.6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 0.4 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.7
1.7
28
34
10
12
5
7
1
1.5
0.55
0.8
0.2
0.4
0.2
0.35
3.7
8.3
7.4
16.6
1.5
3
1.1
1.2
nC
pF
g
fs
V
DS
= 15 V, I
D
= 0.6 A
V
DS
= - 15 V, I
D
= - 0.4 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
-1
0.323
0.740
0.437
1.4
1.2
0.6
0.388
0.890
0.525
1.7
S
1.2
- 1.2
30
- 30
30
- 18
- 3.6
3.3
2.5
- 2.5
± 100
± 100
1
-1
10
- 10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
www.vishay.com
2
Document Number: 67469
S11-0238-Rev. A, 14-Feb-11
Si1539CDL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 0.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 0.5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
I
S
= 0.5 A
I
S
= - 0.4 A
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
- 0.8
10
16
3
8
6
9
4
7
ns
0.3
- 0.3
2
-1
1.2
- 1.2
20
24
6
16
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 30
I
D
0.5 A, V
GEN
= 10 V, R
g
= 1
P-Channel
V
DD
= - 15 V, R
L
= 38
I
D
- 0.4 A, V
GEN
= - 10 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 30
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= - 15 V, R
L
= 38
I
D
- 0.4 A, V
GEN
= - 4.5 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
1
14
9
11
8
9
8
26
32
25
19
14
4
15
10
4
2
21
18
20
16
18
16
39
48
38
29
21
8
23
20
ns
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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