d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 73338
S-61963-Rev. C, 09-Oct-06
www.vishay.com
1
Si1499DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 5 mA
V
DS
= 0 V, V
GS
= - 5 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 2.0 A
V
GS
= - 2.5 V, I
D
= - 1.9 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 1.8 V, I
D
= - 0.8 A
V
GS
= - 1.5 V, I
D
= - 0.5 A
V
GS
= - 1.5 V, I
D
= - 0.100 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2.0 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2.4 A, V
GS
= 0 V
- 0.7
25
7
9
16
T
C
= 25 °C
- 1.6
- 6.5
- 1.2
38
11
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 4 V, R
L
= 2
Ω
I
D
≅
- 2 A, V
GEN
= - 8 V, R
g
= 1
Ω
V
DD
= - 4 V, R
L
= 2
Ω
I
D
≅
- 2 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 1.6 A
V
DS
= - 4 V, V
GS
= 0 V, f = 1 MHz
650
220
122
10.5
1.3
1.9
9.5
9
40
50
60
8
40
46
60
14
60
75
90
15
60
70
90
ns
Ω
16
nC
pF
g
fs
V
DS
= - 4 V, I
D
= - 2.0 A
8
- 6.5
0.0622
0.078
0.094
0.118
0.078
0.095
0.115
0.153
0.424
S
Ω
- 0.35
- 0.55
- 100
-1
- 10
-8
-9
- 2.2
- 0.8
V
mV/°C
V
ns
µA
A
Symbol
Test Conditions
Min
Typ
Max
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73338
S-61963-Rev. C, 09-Oct-06
Si1499DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
10
25 °C, unless noted
10
T
C
= - 55 °C
8
I
D
- Drain Current (A)
V
GS
= 5 thru 2 V
I
D
- Drain Current (A)
8
25 °C
6
125 °C
4
6
1.5 V
4
2
1V
0
0.0
2
0.5
1.0
1.5
2.0
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.25
1000
Transfer Characteristics
r
DS(on)
- On-Resistance (mΩ)
0.20
V
GS
= 1.5 V
0.15
V
GS
= 1.8 V
0.10
V
GS
= 2.5 V
C - Capacitance (pF)
800
C
iss
600
400
C
oss
0.05
200
V
GS
= 4.5 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
C
rss
0.00
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 2 A
4
r
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
I
D
= 2 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 4.5 V
1.2
V
GS
= 2.5 V
1.0
3
V
DS
= 4 V
2
V
DS
= 5.6 V
1
0.8
0
0
2
4
6
8
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73338
S-61963-Rev. C, 09-Oct-06
On-Resistance vs. Junction Temperature
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3
Si1499DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
10
r
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.5
I
D
= 2 A
0.4
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.3
0.2
T
J
= 125 °C
0.1
T
J
= 25 °C
0.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
12
10
I
D
= 250
µA
0.2
Power (W)
V
GS(th)
(V)
8
On-Resistance vs. Gate-to-Source Voltage
0.3
0.1
6
T
A
= 25 °C
4
0.0
- 0.1
2
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
*Limited by r
DS(on)
10
I
D
- Drain Current (A)
10 µs, 100 µs
1 ms
1
10 ms
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
dc, 100 s
0.1
0.01
0.1
1
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which r
DS(on)
is specified
10
Safe Operating Area, Junction-to-Ambient
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Document Number: 73338
S-61963-Rev. C, 09-Oct-06
Si1499DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
6
5
I
D
- Drain Current (A)
4
3
Package Limited
2
1
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Current Derating*
*The power dissipation P
D
is based on T
J(max)
= 175 °C, using junc-
tion-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
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