Si1489EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
d, e
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
-8
±5
- 2.0
a, e
- 2.0
e
- 2.0
b, c, e
- 2.0
b, c, e
-8
- 2.0
a, e
- 1.3
b, c
2.8
1.8
1.56
b, c
1
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Package limited.
Document Number: 67491
S11-0610-Rev. A, 04-Apr-11
www.vishay.com
1
b, d
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1489EDH
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.0 A
V
GS
= - 2.5 V, I
D
= - 1.0 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 1.8 V, I
D
= - 1.0 A
V
GS
= - 1.5 V, I
D
= - 0.5 A
V
GS
= - 1.2 V, I
D
= - 0.5 A
Forward Transconductance
a
Dynamic
b
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2 A, V
GS
= 0 V
- 0.8
30
12
12
18
T
C
= 25 °C
- 2.0
-8
- 1.2
60
25
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 4 V, R
L
= 0.7
Ω
I
D
≅
- 6 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
80
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 7.4 A
10.5
1.5
3.3
400
90
170
690
630
800
180
340
1380
1260
ns
Ω
16
nC
g
fs
V
DS
= - 4 V, I
D
= - 3.0 A
-8
0.040
0.048
0.060
0.070
0.110
12
0.048
0.059
0.073
0.097
0.190
S
Ω
- 0.35
-8
-2
2.2
- 0.7
±5
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67491
S11-0610-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1489EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6.000
1.E-02
1.E-03
5.000
I
GSS
- Gate Current (mA)
1.E-04
4.000
I
GSS
- Gate Current (A)
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
0
2
4
6
8
10
0
2
4
6
8
10
T
J
= 25
°C
T
J
= 150
°C
3.000
T
J
= 25 °C
2.000
1.000
0.000
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
8
V
GS
= 5 V thru 2 V
6
I
D
- Drain Current (A)
V
GS
= 1.5 V
I
D
- Drain Current (A)
4
5
Gate Current vs. Gate-Source Voltage
3
T
C
= 25
°C
2
T
C
= 125
°C
1
T
C
= - 55
°C
4
2
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.20
V
GS
= 1.2 V
0.16
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.5 V
0.12
V
GS
= 2.5 V
0.08
V
GS
= 1.8 V
6
Transfer Characteristics
V
GS
- Gate-to-Source Voltage (V)
5
I
D
= 7.4 A
V
DS
= 2 V
4
V
DS
= 4 V
V
DS
= 6.4 V
3
2
0.04
V
GS
= 4.5 V
0.00
0
2
4
I
D
- Drain Current (A)
6
8
1
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 67491
S11-0610-Rev. A, 04-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1489EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.3
V
GS
= 4.5 V; I
D
= 3 A
1.2
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 1.8 V; I
D
= 1 A
V
GS
= 1.5 V; I
D
= 0.5 A
1.1
I
S
- Source Current (A)
10
T
J
= 150
°C
100
1.0
V
GS
= 1.2 V; I
D
= 0.5 A
1
T
J
= 25
°C
0.9
0.8
- 50
- 25
0
25
50
75
100
125
150
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.14
0.12
R
DS(on)
- On-Resistance (Ω)
0.10
0.08
I
D
= 0.5 A; T
J
= 125
°C
0.06
I
D
= 3 A; T
J
= 25
°C
0.04
I
D
= 0.5 A; T
J
= 25
°C
0.02
0.00
0.0
0.2
- 50
0.3
I
D
= 3 A; T
J
= 125
°C
0.6
0.7
Soure-Drain Diode Forward Voltage
I
D
= 250 μA
V
GS(th)
(V)
0.5
0.4
1.0
2.0
3.0
4.0
5.0
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
30
10
Threshold Voltage
25
I
D
- Drain Current (A)
1 ms
10 ms
100 ms
1s
10 s
DC
T
A
= 25
°C
Single Pulse
BVDSS Limited
0.01
0.1
20
Power (W)
1
Limited by R
DS(on)
*
15
10
0.1
5
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67491
S11-0610-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1489EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
3.0
2.5
6
I
D
- Drain Current (A)
2.0
Power (W)
Package Limited
0.5
0
25
50
75
100
125
150
4
1.5
1.0
2
0
T
C
- Case Temperature (°C)
0.0
25
50
75
100
125
150
T
C
- Foot Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67491
S11-0610-Rev. A, 04-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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