d. Maximum under Steady State conditions is 125 °C/W.
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
www.vishay.com
1
Si1473DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2.0 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2 A, V
GS
= 0 V
- 0.85
23
15
9
14
T
C
= 25 °C
- 1.6
- 6.5
- 1.2
35
23
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 7.5
Ω
I
D
≅
- 2 A, V
GEN
= - 10 V, R
g
= 1
Ω
V
DD
= - 15 V, R
L
= 7.5
Ω
I
D
≅
- 2 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
365
68
51
4.1
1.2
1.7
9.2
24
60
25
15
4
10
15
6
40
100
40
25
8
20
25
12
ns
Ω
6.2
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 2.0 A
V
GS
= - 4.5 V, I
D
= - 1.6 A
V
DS
= - 10 V, I
D
= - 2.0 A
-3
0.084
0.120
6
0.100
0.145
-1
- 30
- 32
4
-3
- 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
V
GS
= 10
V
thru 5
V
8
I
D
- Drain Current (A)
4
V
6
I
D
- Drain Current (A)
1.6
2.0
1.2
T
J
= 125 °C
0.8
25 °C
0.4
4
2
3
V
- 55 °C
0
0.0
0.0
0.6
1.2
1.8
2.4
3.0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.20
600
Transfer Characteristics
R
DS(on)
- On-Resistance ( )
0.16
V
GS
= 4.5
V
0.12
V
GS
= 10
V
0.08
C - Capacitance (pF)
480
C
iss
360
240
0.04
120
C
rss
C
oss
0.00
0.0
0
1.6
3.2
4.8
6.4
8.0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 2.5 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
V
DS
= 15
V
6
V
DS
= 20
V
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
I
D
= 2 A
Capacitance
V
GS
= 10
V
1.2
V
GS
= 4.5
V
4
1.0
2
0.8
0
0
2
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
On-Resistance vs. Junction Temperature
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3
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.5
I
D
= 2 A
R
DS(on)
- On-Resistance ( )
0.4
I
S
- Source Current (A)
T
J
= 150 °C
1
0.3
0.1
T
J
= 25 °C
0.2
T
J
= 125 °C
0.1
T
J
= 25 °C
0.01
0.0
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.6
30
On-Resistance vs. Gate-to-Source Voltage
0.4
V
GS(th)
Variance
(V)
I
D
= 250
µA
24
0.0
Power (W)
0.2
I
D
= 5 mA
18
12
- 0.2
6
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
100 ms
1s
10 s
DC
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74438
S10-0646-Rev. E, 22-Mar-10
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4.5
3.5
3.6
I
D
- Drain Current (A)
2.8
Package Limited
2.7
Power Dissipation (W)
2.1
1.8
1.4
0.9
0.7
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
1.20
Power Derating, Junction-to-Foot
0.96
Power Dissipation (W)
0.72
0.48
0.24
0.00
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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