Si1417EDH
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.085 @ V
GS
= –4.5 V
–12
0.115 @ V
GS
= –2.5 V
0.160 @ V
GS
= –1.8 V
I
D
(A)
–3.3
–2.9
–2.4
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
ESD Protected: 3000 V
D
Thermally Enhanced SC-70 Package
APPLICATIONS
D
Load Switching
D
PA Switch
D
Level Switch
SOT-363
SC-70 (6-LEADS)
D
1
6
D
D
Marking Code
YY
BB
XX
G
Lot Traceability
and Date Code
Part # Code
3 kW
D
2
5
D
G
3
4
S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
–1.4
1.56
0.81
–55 to 150
–2.4
–8
–0.9
1.0
0.52
W
_C
–1.9
A
Symbol
V
DS
V
GS
5 secs
Steady State
–12
"12
Unit
V
–3.3
–2.7
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71412
S-03187—Rev. A, 05-Mar-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
C/W
1
Si1417EDH
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
Gate-Body Leakage
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –9.6 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= –9.6 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –3.3 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –2.9 A
V
GS
= –1.8 V, I
D
= –1.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –10 V, I
D
= –3.3 A
I
S
= –1.4 A, V
GS
= 0 V
–4
0.070
0.095
0.133
8
–0.80
–1.1
0.085
0.115
0.160
S
V
W
–0.45
"1.5
"10
–1
–5
V
mA
mA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –6 V, R
L
= 6
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –6 V, V
GS
= –4.5 V, I
D
= –3.3 A
5.8
1.3
1.5
0.60
1.4
4.9
4.9
1.0
2.1
7.5
7.5
ms
m
8
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
10,000
Gate Current vs. Gate-Source Voltage
1,000
I
GSS
– Gate Current (mA)
6
I
GSS
– Gate Current (
mA)
100
T
J
= 150_C
4
10
1
0.1
T
J
= 25_C
2
0
0
3
6
9
12
15
18
0.01
0
3
6
9
12
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71412
S-03187—Rev. A, 05-Mar-01
2
Si1417EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
V
GS
= 5 thru 2.5 V
2V
6
I
D
– Drain Current (A)
I
D
– Drain Current (A)
6
25_C
8
T
C
= –55_C
Vishay Siliconix
Transfer Characteristics
125_C
4
4
1.5 V
2
1V
0
0
1
2
3
4
5
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
1200
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.4
C – Capacitance (pF)
1000
C
iss
800
0.3
600
0.2
V
GS
= 1.8 V
V
GS
= 2.5 V
0.1
V
GS
= 4.5 V
0.0
0.0
400
C
oss
200
C
rss
0
1.5
3.0
4.5
6.0
7.5
0
2
4
6
8
10
12
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= –3.3 A
1.6
On-Resistance vs. Junction Temperature
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.4
V
GS
= 4.5 V
I
D
= –3.3 A
1.2
2
1.0
1
0.8
0
0.0
1.5
3.0
4.5
6.0
7.5
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71412
S-03187—Rev. A, 05-Mar-01
www.vishay.com
3
Si1417EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.25
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
T
J
= 25_C
r
DS(on)
– On-Resistance (
W
)
0.20
I
S
– Source Current (A)
0.15
I
D
= –3.3 A
1
0.10
0.05
0.1
0
0.3
0.6
0.9
1.2
1.5
0.00
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
35
Single Pulse Power, Junction-to-Ambient
0.3
V
GS(th)
Variance (V)
28
0.2
Power (W)
21
0.1
14
0.0
7
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71412
S-03187—Rev. A, 05-Mar-01
Si1417EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71412
S-03187—Rev. A, 05-Mar-01
www.vishay.com
5
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