Si1410EDH
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.070 @ V
GS
= 4.5 V
20
0.080 @ V
GS
= 2.5 V
0.100 @ V
GS
= 1.8 V
I
D
(A)
3.7
3.4
3.0
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
ESD Protected: 2000 V
D
Thermally Enhanced SC-70 Package
APPLICATIONS
D
Load Switching
D
PA Switch
D
Level Switch
SOT-363
SC-70 (6-LEADS)
D
D
1
6
D
Marking Code
D
2
5
D
YY
AA
G
3
4
S
XX
G
Lot Traceability
and Date Code
Part # Code
Top View
S
1 kW
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
1.4
1.56
0.81
–55 to 150
2.6
8
0.9
1.0
0.52
W
_C
2.0
A
Symbol
V
DS
V
GS
5 secs
20
Steady State
Unit
V
"12
3.7
2.9
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
C/W
1
Si1410EDH
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
Gate-Body Leakage
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3.7 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 3.4 A
V
GS
= 1.8 V, I
D
= 1.7 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 10 V, I
D
= 3.7 A
I
S
= 1.4 A, V
GS
= 0 V
4
0.055
0.065
0.080
10
0.75
1.1
0.070
0.080
0.100
S
V
W
0.45
"1
"10
1
5
V
mA
mA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.7 A
5.6
0.75
1.10
0.15
0.4
1.9
1.2
0.25
0.6
2.8
1.8
ms
m
8
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
10,000
Gate Current vs. Gate-Source Voltage
I
GSS
– Gate Current (mA)
8
I
GSS
– Gate Current (
mA)
1,000
100
6
10
T
J
= 150_C
4
1
0.1
T
J
= 25_C
2
0
0
3
6
9
12
15
18
0.01
0
3
6
9
12
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
2
Si1410EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
V
GS
= 5 thru 2 V
6
I
D
– Drain Current (A)
I
D
– Drain Current (A)
1.5 V
6
T
C
= –55_C
125_C
4
8
25_C
Vishay Siliconix
Transfer Characteristics
4
2
1V
0
0
1
2
3
4
5
2
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
1000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.12
C – Capacitance (pF)
800
0.09
V
GS
= 1.8 V
V
GS
= 2.5 V
600
C
iss
0.06
V
GS
= 4.5 V
0.03
400
200
C
oss
0.00
0.0
0
1.5
3.0
4.5
6.0
7.5
0
C
rss
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 3.7 A
1.8
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.6
V
GS
= 4.5 V
I
D
= 3.7 A
1.4
3
1.2
2
1.0
1
0.8
0
0.0
1.5
3.0
4.5
6.0
7.5
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
www.vishay.com
3
Si1410EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.25
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
0.20
I
S
– Source Current (A)
T
J
= 150_C
1
T
J
= 25_C
0.15
I
D
= 3.7 A
0.10
0.05
0.1
0
0.3
0.6
0.9
1.2
1.5
0.00
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.2
I
D
= 250
mA
35
Single Pulse Power, Junction-to-Ambient
0.1
V
GS(th)
Variance (V)
28
–0.0
Power (W)
21
–0.1
14
–0.2
7
–0.3
–0.4
–50
–25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
Si1410EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
www.vishay.com
5
MEMS传感器
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