Si1405DL
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.125 @ V
GS
= –4.5 V
–8
8
0.160 @ V
GS
= –2.5 V
0.210 @ V
GS
= –1.8 V
I
D
(A)
"1.8
"1.6
"1.4
SOT-363
SC-70 (6-LEADS)
D
1
6
D
Marking Code
D
2
5
D
OB
XX
YY
Lot Traceability
and Date Code
G
3
4
S
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
P
D
T
J
, T
stg
–0.8
0.625
0.400
–55 to 150
Symbol
V
DS
V
GS
5 secs
–8
Steady State
Unit
V
"8
"1.8
"1.5
"5
–0.8
0.568
"1.6
"1.2
A
W
0.295
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
165
180
105
Maximum
200
220
130
Unit
_C/W
2-1
Si1405DL
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –6.4 V, V
GS
= 0 V
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –1.8 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –2.5 V, I
D
= –1.6 A
V
GS
= –1.8 V, I
D
= –0.8 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –10 V, I
D
= –1.8 A
I
S
= –0.8 A, V
GS
= 0 V
–2
0.100
0.130
0.170
3.8
–0.76
–1.1
0.125
0.160
0.210
S
V
W
–0.45
"100
–1
–5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –0.8 A, di/dt = 100 A/ms
V
DD
= –4 V, R
L
= 10
W
4 V,
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –4 V, V
GS
= –4.5 V I
D
= –1.8 A
4V
4 5 V,
18
5.5
0.9
0.9
8
36
33
30
20
12
55
50
45
40
ns
7.0
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
5
V
GS
= 5 thru 2 V
4
I
D
– Drain Current (A)
I
D
– Drain Current (A)
3.2
4.0
Transfer Characteristics
T
C
= –55_C
25_C
125_C
2.4
3
1.5 V
2
1.6
1
0.5 V
0
0
1
2
3
4
5
1V
0.8
0
0
0.6
1.2
1.8
2.4
V
DS
– Drain-to-Source Voltage (V)
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S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
2-2
Si1405DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.5
r
DS(on)
– On-Resistance (
W
)
1000
Vishay Siliconix
Capacitance
0.3
V
GS
= 1.8 V
C – Capacitance (pF)
0.4
800
C
iss
600
0.2
V
GS
= 2.5 V
400
C
oss
200
C
rss
0
0.1
V
GS
= 4.5 V
0
0
1
2
3
4
5
0
2
4
6
8
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 4 V
I
D
= 1.8 A
4
1.4
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 1.8 A
1.2
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
2
3
4
5
6
1.0
2
0.8
1
0
0
1
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
5
T
J
= 150_C
I
S
– Source Current (A)
0.5
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
0.4
I
D
= 1.8 A
0.3
I
D
= 0.8 A
0.2
T
J
= 25_C
1
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si1405DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
10
Single Pulse Power, Junction-to-Ambient
0.3
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
Power (W)
8
6
0.1
4
0.0
2
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
10
–2
10
–1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 180_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
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