THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1403BDL
www.vishay.com
Vishay Siliconix
SYMBOL
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= -0.8 A, dI/dt = 100 A/μs
V
DD
= -10 V, R
L
= 10
,
I
D
-1 A, V
GEN
= -4.5 V, R
g
= 6
f = 1 MHz
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1.5 A
TEST CONDITIONS
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= -5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -3.6 V, I
D
= -1.4 A
V
GS
= -2.5 V, I
D
= -0.8 A
V
DS
= -10 V, I
D
= -1.5 A
I
S
= -0.8 A, V
GS
= 0 V
MIN.
-0.6
-
-
-
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
0.120
0.140
0.220
3.4
-0.8
2.9
0.65
1.0
9
13
30
28
13
12
4
MAX.
-1.3
± 100
-1
-5
-
0.150
0.175
0.265
-
-1.1
4.5
-
-
-
20
45
42
20
25
8
nC
ns
nC
S
V
UNIT
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Gate threshold voltage
Gate leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state
resistance
a
Forward transconductance
a
Diode forward
Dynamic
b
voltage
a
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain reverse recovery time
Body diode reverse recovery charge
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.0
V
GS
= 5 V thru 2.5. V
3.2
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3.2
4.0
T
C
= - 55 °C
25 °C
125 °C
2.4
2V
1.6
2.4
1.6
0.8
1.5 V
0.0
0.0
1 V, 0.5 V
0.8
1.6
2.4
3.2
4.0
0.8
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
S10-0110-Rev. D, 18-Jan-10
Document Number: 73253
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1403BDL
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.40
500
Vishay Siliconix
R
DS(on)
- On-Resistance ()
0.32
C - Capacitance (pF)
400
0.24
V
GS
= 2.5 V
300
C
iss
0.16
V
GS
= 3.6 V
200
C
oss
100
C
rss
0.08
V
GS
= 4.5 V
0.00
0
1
2
I
D
- Drain Current (A)
3
4
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 10 V
I
D
= 1.5 A
4
R
DS(on)
- On-Resistance
1.4
1.6
Capacitance
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 4.5 V
I
D
= 1.5 A
(Normalized)
3
1.2
2
1.0
1
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
10
On-Resistance vs. Junction Temperature
0.40
0.35
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
I
S
- Source Current (A)
0.30
0.25
I
D
= 0.8 A
0.20
0.15
0.10
0.05
I
D
= 1.5 A
1
T
J
= 25 °C
0.1
0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
S10-0110-Rev. D, 18-Jan-10
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73253
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73253.
S10-0110-Rev. D, 18-Jan-10
Document Number: 73253
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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