SPICE Device Model Si1317DL
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to 5 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
D
C
GD
M
2
G
R
G
Gy
+ –
ETCV
Gx
C
GS
M
1
R
1
3
DBD
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 67525
S11-0395-Rev. A, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SPICE Device Model Si1317DL
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.4 A
V
DS
= - 10 V, V
GS
= - 2.5 V, I
D
= - 1.4 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
273
56
45
3.4
2.2
0.7
1
272
55
44
4.3
2.7
0.7
1
nC
pF
V
GS(th)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= - 4.5 V, I
D
= - 1.4 A
V
GS
= - 2.5 V, I
D
= - 1.2 A
V
DS
= - 5 V, I
D
= - 1.4 A
I
S
= - 0.7 A
0.70
0.126
0.160
4.5
- 0.70
-
0.125
0.160
5
- 0.80
V
S
V
SYMBOL
TEST CONDITIONS
SIMULATED MEASURED
DATA
DATA
UNIT
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
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Document Number: 67525
S11-0395-Rev. A, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SPICE Device Model Si1317DL
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA
T
J
= 25 °C, unless otherwise noted
6.0
1.0
4.5
I
D
-
Drain Current (A)
V
GS
= 5 V, 3.5 V, 3 V, 2.5 V
I
D
- Drain Current (A)
0.8
0.6
T
J
= 125 °C
3.0
V
GS
= 2 V
0.4
T
J
= - 55 °C
0.2
T
J
= 25 °C
1.5
V
GS
= 1.5 V
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
-
Drain-to-Source Voltage (V)
0.0
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
-
Gate-to-Source
Voltage (V)
0.26
600
0.22
R
DS(on)
-
On-Resistance (Ω)
V
GS
= 2.5 V
C - Capacitance (pF)
0.18
450
C
iss
300
C
oss
150
0.14
V
GS
= 4.5 V
0.10
C
rss
0.06
0.0
1.5
3.0
I
D
-
Drain Current (A)
4.5
6.0
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
4.5
I
D
= 1.4 A
100
V
GS
-
Gate-to-Source
Voltage (V)
3.6
V
DS
= 10 V
I
S
-
Source
Current (A)
10
2.7
1.8
V
DS
= 16 V
1
T
J
= 150 °C
0.9
T
J
= 25 °C
0.0
0
1
2
3
4
5
0.1
0
0.3
0.6
0.9
1.2
1.5
Q
g
-
Total
Gate
Charge (nC)
V
SD
-
Source-to-Drain
Voltage (V)
Note
Dots and squares represent measured data.
Document Number: 67525
S11-0395-Rev. A, 14-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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