Si1305EDL
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.280 @ V
GS
= –4.5 V
–8
8
0.380 @ V
GS
= –2.5 V
0.530 @ V
GS
= –1.8 V
I
D
(A)
"0.92
"0.79
"0.67
SOT-323
SC-70 (3-LEADS)
G
1
Marking Code
3
D
LE
XX
YY
Lot Traceability
and Date Code
S
2
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
–0.28
0.34
0.22
–55 to 150
Symbol
V
DS
V
GS
5 secs
–8
Steady State
Unit
V
"8
"0.92
"0.74
"3
–0.24
0.29
"0.86
"0.69
A
W
0.19
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71095
S-99399—Rev. A, 29-Nov-99
www.siliconix.com
S
FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
315
360
285
Maximum
375
430
340
Unit
_C/W
1
Si1305DL
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= –6.4 V, V
GS
= 0 V
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –1 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –2.5 V, I
D
= –0.5 A
V
GS
= –1.8 V, I
D
= –0.3 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –5 V, I
D
= –1 A
I
S
= –1 A, V
GS
= 0 V
–3
0.230
0.315
0.440
3.5
–1.2
0.280
0.380
0.530
S
V
W
–045
"1
–1
–5
V
mA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1 A, di/dt = 100 A/ms
V
DD
= –4 V, R
L
= 4
W
4 V,
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –4 V, V
GS
= –4.5 V I
D
= –1 A
4V
4 5 V,
1
2.6
0.54
0.52
206
431
1350
1000
500
330
690
2160
1600
800
ns
4
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
V
GS
= 4.5 V
4V
3.5 V
6
I
D
– Drain Current (A)
I
D
– Drain Current (A)
3V
4
5
6
Transfer Characteristics
T
C
= –55_C
25_C
125_C
3
4
2.5 V
2V
2
1.5 V
1V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
www.siliconix.com
S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71095
Pending—Rev. A, 09-Nov-99
2
Si1305EDL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On Resistance vs. Drain Current
1.4
r
DS(on)
– On-Resistance (
W
)
1.2
C – Capacitance (pF)
V
GS
= 1.8 V
1.0
0.8
0.6
V
GS
= 2.5 V
0.4
0.2
0
0
1
2
3
4
5
6
7
V
GS
= 4.5 V
350
300
250
200
150
100
50
0
0
2
4
6
8
C
rss
C
oss
C
iss
Vishay Siliconix
Capacitance
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
8
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 4 V
I
D
= 1 A
6
1.6
On Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 1 A
1.2
4
r
DS(on)
– On-Resistance (
W)
(Normalized)
2
3
4
5
0.8
2
0.4
0
0
1
Q
g
– Total Gate Charge (nC)
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source Drain Diode Forward Voltage
10
On Resistance vs. Gate to Source Voltage
1.0
I
S
– Source Current (A)
1
r
DS(on)
– On-Resistance (
W
)
T
J
= 150_C
0.8
0.6
I
D
= 1 A
0.1
T
J
= 25_C
0.01
0.4
0.2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71095
Pending—Rev. A, 09-Nov-99
www.siliconix.com
S
FaxBack 408-970-5600
3
Si1305DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate Current vs. Gate Source Voltage
400
1000
100
300
I
GSS
(
m
A)
10
I
G
(
m
A)
1
I
G
(mA) @ 150_C
0.1
0.01
I
G
(mA) @ 25_C
0.001
0
0
2
4
6
8
V
GS
– Gate-to-Source Voltage (v)
0.0001
0.1
1
V
GS
– Gate-to-Source Voltage (v)
8
Gate-Source Voltage vs. Gate-Current
200
I
GSS
(mA) @ T = 25_C
100
Threshold Voltage
0.3
20
Single Pulse Power
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
0.1
Power (W)
16
12
T
A
= 25_C
8
0.0
–0.1
4
–0.2
–50
–25
0
25
50
75
100
125
150
0
10
–3
10
–2
10
–1
1
10
100
600
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction to Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 360_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.siliconix.com
S
FaxBack 408-970-5600
4
Document Number: 71095
Pending—Rev. A, 09-Nov-99
Si1305EDL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction to Foot
2
1
Duty Cycle = 0.5
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71095
Pending—Rev. A, 09-Nov-99
www.siliconix.com
S
FaxBack 408-970-5600
5
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