Si1301DL
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–20
r
DS(on)
(W)
3.8 @ V
GS
= –4.5 V
5.0 @ V
GS
= –2.5 V
I
D
(mA)
–180
–100
SOT-323
SC-70 (3-Leads)
Marking Code
LG
3
S
2
D
XX
YY
Lot Traceability
and Date Code
Part # Code
G
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
Limit
–20
"8
–180
–140
–500
0.15
0.10
–55 to 150
Unit
V
mA
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Symbol
R
thJA
Limit
833
Unit
_C/W
Document Number: 71302
S-01830—Rev. A, 21-Aug-00
www.vishay.com
1
Si1301DL
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
DS
= 0 V, I
D
= –10
mA
V
DS
= V
GS
, I
D
= –50
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55_C
V
GS
w
–4.5 V, V
DS
= –8.0 V
V
GS
w
–2.5 V, V
DS
= –5.0 V
V
GS
= –4.5 V, I
D
= –180 mA
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= –2.5 V, I
D
=
–400
mA
–120
2.6
4.0
200
–0.7
–1.2
3.8
5.0
W
mS
V
–20
–0.4
–24
V
–0.9
"2
–0.001
–1.5
"100
–100
–1
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
On-State Drain Current
a
I
D(on)
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
–
75 mA
V
DS
= –2.5 V, I
D
= –50 mA
I
S
= –50 mA, V
GS
= 0 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
MHz
V
DS
= –5.0 V, V
GS
= 0 V, f = 1 MH
50 V
V
V
DS
= –5.0 V, V
GS
= –4.5 V I
D
= –100 mA
50V
4 5 V,
100 A
350
25
125
20
14
5
pF
F
450
pC
C
Switching
b, c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –3.0 V, R
L
= 100
W
3 0 V,
I
D
= –0.25 A, V
GEN
= –4.5 V R
G
= 10
W
0 25 A
4 5 V,
7
25
19
9
12
35
ns
30
15
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
2
Document Number: 71302
S-01830—Rev. A, 21-Aug-00
Si1301DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.2
5V
0.4
4.5 V
0.8
4V
3.5 V
3V
2.5 V
2V
0
0
1
2
3
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
– Drain Current (A)
25_C
0.3
125_C
0.2
0.5
T
C
= –55_C
Vishay Siliconix
Transfer Characteristics
1.0
I
D
– Drain Current (A)
0.6
0.4
0.2
0.1
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
45
Capacitance
r
DS(on)
– On-Resistance (
W
)
36
C – Capacitance (pF)
6
V
GS
= 2.5 V
4
V
GS
= 4.5 V
2
27
C
iss
18
C
oss
9
C
rss
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
3
6
9
12
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 80 mA
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 180 m A
6
r
DS(on)
– On-Resistance (
W)
(Normalized)
200
300
400
500
600
8
1.4
1.2
4
1.0
2
0.8
0
0
100
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (pC)
T
J
– Junction Temperature (_C)
Document Number: 71302
S-01830—Rev. A, 21-Aug-00
www.vishay.com
3
Si1301DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
6
On-Resistance vs. Gate-to-Source Voltage
5
0.1
4
I
D
= 180 mA
3
0.01
T
J
= 25_C
2
1
0.001
0.00
0.5
01
1.5
0
1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.3
I
D
= 50
mA
0.2
V
GS(th)
Variance (V)
0.1
0.0
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
T
J
– Temperature (_C)
www.vishay.com
4
Document Number: 71302
S-01830—Rev. A, 21-Aug-00
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