Si1035X
New Product
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
5 @ V
GS
= 4.5 V
N-Channel
20
7 @ V
GS
= 2.5 V
9 @ V
GS
= 1.8 V
10 @ V
GS
= 1.5 V
8 @ V
GS
= –4.5 V
P-Channel
–20
12 @ V
GS
= –2.5 V
15 @ V
GS
= –1.8 V
20 @ V
GS
= –1.5 V
I
D
(mA)
200
175
150
50
–150
–125
–100
–30
1.5 V Rated
FEATURES
D
Very Small Footprint
D
High-Side Switching
D
Low On-Resistance:
N-Channel, 5
W
P-Channel, 8
W
D
Low Threshold:
"0.9
V (typ)
D
Fast Switching Speed: 45 ns (typ)
D
1.5-V Operation
D
Gate-Source ESD Protection
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
D
D
D
D
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
SC-89
S
1
1
6
D
1
G
1
2
5
G
2
Marking Code: M
D
2
3
4
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
P-Channel
5 secs
"5
Symbol
V
DS
V
GS
5 secs
Steady State
20
Steady State
–20
Unit
V
190
I
D
I
DM
I
S
P
D
T
J
, T
stg
ESD
450
280
145
140
650
180
130
–155
–110
–650
–145
–105
mA
–380
250
130
mW
_C
V
380
250
130
–55 to 150
2000
–450
280
145
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
www.vishay.com
1
Si1035X
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"2.8
V
"
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"4.5
V
"
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= –16 V, V
GS
= 0 V, T
J
= 85_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= 4.5 V, I
D
= 200 mA
V
GS
= –4.5 V, I
D
= –150 mA
V
GS
= 2.5 V, I
D
= 175 mA
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –125 mA
V
GS
= 1.8 V, I
D
= 150 mA
V
GS
= –1.8 V, I
D
= –100 mA
V
GS
= 1.5 V, I
D
= 40 mA
V
GS
= –1.5 V, I
D
= –30 mA
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA
V
DS
= –10 V, I
D
= –150 mA
I
S
= 150 mA, V
GS
= 0 V
I
S
= –150 mA, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.5
0.4
1.2
–1.2
V
S
250
–200
5
8
7
12
9
15
10
20
W
mA
0.40
V
–0.40
"0.5
"0.5
"1.5
"1.0
1
–1
"1.0
"1.0
"3.0
"3.0
500
–500
10
–10
nA
mA
m
Symbol
Test Condition
Min
Typ
Max
Unit
mA
m
Diode Forward Voltage
a
V
SD
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 150 mA
Gate-Source Charge
Q
gs
P-Channel
V
DS
= –10 V, V
GS
= –4.5 V, I
D
= –150 mA
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
V
DD
= 10 V, R
L
= 47
W
I
D
^
200 mA, V
GEN
= 4.5 V, R
G
= 10
W
P-Channel
V
DD
= –10 V, R
L
= 65
W
I
D
^
–150 A, V
GEN
= –4.5 V, R
G
= 10
W
N-Ch
P-Ch
N-Ch
P-Ch
750
1500
75
pC
150
225
450
75
80
ns
75
90
Turn-Off Time
t
OFF
Gate-Drain Charge
Q
gd
Turn-On Time
t
ON
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
Si1035X
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
Output Characteristics
0.5
V
GS
= 5 thru 1.8 V
0.4
I D – Drain Current (mA)
I D – Drain Current (A)
600
T
J
= –55_C
500
25_C
400
125_C
300
Vishay Siliconix
N CHANNEL
Transfer Characteristics
0.3
0.2
200
0.1
1V
0.0
0
1
2
3
4
5
6
100
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
40
r
DS(on)
– On-Resistance (
W
)
100
V
GS
= 0 V
f = 1 MHz
30
C – Capacitance (pF)
80
Capacitance
C
iss
60
20
40
C
oss
V
GS
= 1.8 V
10
V
GS
= 2.5 V
V
GS
= 4.5 V
0
0
50
100
150
200
250
20
0
0
C
rss
4
8
12
16
20
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 150 mA
4
1.60
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.40
V
GS
= 4.5 V
I
D
= 200 mA
3
1.20
V
GS
= 1.8 V
I
D
= 175 mA
2
1.00
1
0.80
0
0.0
0.2
0.4
0.6
0.8
0.60
–50
–25
0
25
50
75
100
125
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
www.vishay.com
3
Si1035X
Vishay Siliconix
New Product
N CHANNEL
On-Resistance vs. Gate-to-Source Voltage
50
T
J
= 125_C
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (mA)
40
I
D
= 200 mA
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1000
100
T
J
= 25_C
30
I
D
= 175 mA
10
T
J
= 50_C
20
10
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage Variance vs. Temperature
0.3
3.0
I
GSS
vs. Temperature
0.2
V
GS(th)
Variance (V)
I
D
= 0.25 mA
0.1
I
GSS
– (mA)
2.5
2.0
–0.0
1.5
–0.1
1.0
V
GS
= 2.8 V
–0.2
0.5
–0.3
–50
–25
0
25
50
75
100
125
0.0
–50
–25
0
25
50
75
100
125
T
J
– Temperature (_C)
T
J
– Temperature (_C)
BV
GSS
vs. Temperature
BV
GSS
– Gate-to-Source Breakdown Voltage (V)
7
6
5
4
3
2
1
0
–50
–25
0
25
50
75
100
125
T
J
– Temperature (_C)
www.vishay.com
4
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
Si1035X
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
Output Characteristics
0.5
V
GS
= 5 thru 2.5 V
0.4
I
D
– Drain Current (A)
1.8 V
0.3
I
D
– Drain Current (mA)
2V
400
500
T
J
= –55_C
25_C
Vishay Siliconix
P CHANNEL
Transfer Characteristics
300
125_C
0.2
200
0.1
100
0.0
0
1
2
3
4
5
6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
25
r
DS(on)
– On-Resistance (
W
)
V
GS
= 1.8 V
C – Capacitance (pF)
20
120
V
GS
= 0 V
f = 1 MHz
Capacitance
100
80
C
iss
15
V
GS
= 2.5 V
10
V
GS
= 4.5 V
5
60
40
C
oss
20
C
rss
0
4
8
12
16
20
0
0
200
400
600
800
1000
0
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 150 mA
4
1.6
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.4
V
GS
= 4.5 V
I
D
= 150 mA
1.2
3
2
1.0
V
GS
= 1.8 V
I
D
= 125 mA
1
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.6
–50
–25
0
25
50
75
100
125
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
www.vishay.com
5
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