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Si1034X

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

R

DS(on)

(Ω)

5 at V

GS

= 4.5 V

20

7 at V

GS

= 2.5 V

9 at V

GS

= 1.8 V

10 at V

GS

= 1.5 V

I

D

(mA)

200

175

150

50

FEATURES

•

Halogen-free Option Available

• TrenchFET

®

Power MOSFET: 1.5 V Rated

• Low-Side Switching

• Low On-Resistance: 5

Ω

• Low Threshold: 0.9 V (typ.)

• Fast Switching Speed: 35 ns (typ.)

• 1.5 V Operation

• Gate-Source ESD Protected: 2000 V

RoHS

COMPLIANT

SC-89

S

1

6

D

1

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

Marking Code: L

G

1

2

5

G

2

• Low-Voltage Operation

• High-Speed Circuits

• Low Battery Voltage Operation

D

2

3

4

S

2

Top

View

Ordering Information:

Si1034X-T1-E3 (Lead (Pb)-free)

Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

Gate-Source ESD Rating (HBM, Method 3015)

Notes:

a. Surface Mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

T

A

= 25 °C

T

A

= 85 °C

T

A

= 25 °C

T

A

= 85 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

J

, T

stg

ESD

450

280

145

- 55 to 150

2000

190

140

650

380

250

130

mW

°C

V

5s

20

±5

180

130

mA

Steady State

Unit

V

Document Number: 71427

S-80643-Rev. B, 24-Mar-08

www.vishay.com

1

Si1034X

Vishay Siliconix

SPECIFICATIONS

T

A

= 25 °C, unless otherwise noted

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State

Resistance

a

Forward Transconductance

a

Diode Forward Voltage

a

Dynamic

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

V

DD

= 10 V, R

L

= 47

Ω

I

D

≅

200 mA, V

GEN

= 4.5 V, R

G

= 10

Ω

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 150 mA

750

75

225

50

25

50

25

ns

pC

V

GS(th)

I

GSS

I

DSS

I

D(on)

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 2.8 V

V

DS

= 0 V, V

GS

= ± 4.5 V

V

DS

= 16 V, V

GS

= 0 V

V

DS

= 16 V, V

GS

= 0 V, T

J

= 85 °C

V

DS

= 5 V, V

GS

= 4.5 V

V

GS

= 4.5 V, I

D

= 200 mA

R

DS(on)

V

GS

= 2.5 V, I

D

= 175 mA

V

GS

= 1.8 V, I

D

= 150 mA

V

DS

= 1.5 V, I

D

= 40 mA

g

fs

V

SD

V

DS

= 10 V, I

D

= 200 mA

I

S

= 150 mA, V

GS

= 0 V

0.5

1.2

250

5

7

9

10

S

V

Ω

0.40

± 0.5

± 1.0

1

1.2

± 1.0

± 3.0

500

10

V

µA

nA

µA

mA

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

T

A

= 25 °C, unless otherwise noted

0.5

V

GS

= 5 thru 1.8

V

0.4

I

D

- Drain Current (mA)

I

D

- Drain Current (A)

600

T

J

= - 55 °C

500

25 °C

125 °C

400

0.3

300

0.2

200

0.1

1

V

0.0

0

1

2

3

4

5

6

100

0

0.0

0.5

1.0

1.5

2.0

2.5

V

DS

- Drain-to-Source

Voltage

(V)

V

GS

- Gate-to-Source

Voltage

(V)

Output Characteristics

Transfer Characteristics

www.vishay.com

2

Document Number: 71427

S-80643-Rev. B, 24-Mar-08

Si1034X

Vishay Siliconix

TYPICAL CHARACTERISTICS

T

A

= 25 °C, unless otherwise noted

40

100

V

GS

= 0

V

f = 1 MHz

R

DS(on)

- On-Resistance (Ω)

80

30

C - Capacitance (pF)

C

iss

60

20

40

C

oss

V

GS

= 1.8

V

10

V

GS

= 2.5

V

GS

= 4.5

V

0

50

100

150

200

250

20

0

C

rss

4

8

12

16

20

I

D

- Drain Current (mA)

V

DS

- Drain-to-Source

Voltage

(V)

On-Resistance vs. Drain Current

5

V

DS

= 10

V

I

D

= 150 mA

4

R

DS(on)

- On-Resistance

1.40

1.60

Capacitance

V

GS

- Gate-to-Source

Voltage

(V)

V

GS

= 4.5

V

I

D

= 200 mA

(Normalized)

1.20

V

GS

= 1.8

V

I

D

= 175 mA

1.00

3

2

1

0.80

0

0.0

0.2

0.4

0.6

0.8

0.60

- 50

- 25

0

25

50

75

100

125

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

1000

T

J

= 125 °C

R

DS(on)

- On-Resistance (Ω)

40

I

S

- Source Current (mA)

50

On-Resistance vs. Junction Temperature

I

D

= 200 mA

I

D

= 175 mA

30

100

T

J

= 25 °C

T

J

= 50 °C

10

20

10

1

0.0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

1

2

3

4

5

6

V

SD

- So

u

rce-to-Drain

V

oltage (

V

)

V

GS

- Gate-to-Source

Voltage

(V)

Surge-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 71427

S-80643-Rev. B, 24-Mar-08

www.vishay.com

3

Si1034X

Vishay Siliconix

TYPICAL CHARACTERISTICS

T

A

= 25 °C, unless otherwise noted

0.3

3.0

0.2

V

GS(th)

Variance

(V)

I

D

= 0.25 mA

0.1

I

GSS

- (µA)

2.5

2.0

0.0

1.5

- 0.1

1.0

V

GS

= 2.8

V

- 0.2

0.5

- 0.3

- 50

- 25

0

25

50

75

100

125

0.0

- 50

- 25

0

25

50

75

100

125

T

J

- Temperature (°C)

T

J

- Temperature (°C)

Threshold Voltage Variance vs. Temperature

BV

GSS

- Gate-to-Source Breakdown

Voltage

(V)

7

6

5

4

3

2

1

0

- 50

I

GSS

vs. Temperature

- 25

0

25

50

75

100

125

T

J

- Temperature (°C)

BV

GSS

vs. Temperature

2

1

Duty Cycle = 0.5

Normalized

Effective Transient

Thermal Impedance

0.2

Notes:

0.1

0.05

t

1

P

DM

0.02

t

2

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 500 °C/W

t

1

t

2

Single Pulse

0.01

10

-4

10

-3

10

-2

10

-1

1

Square

Wave

Pulse Duration (s)

3. T

JM

- T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see

http://www.vishay.com/ppg?71427.

www.vishay.com

4

Document Number: 71427

S-80643-Rev. B, 24-Mar-08

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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SI1034X_05

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