b. Pulse width limited by maximum junction temperature.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1
Si1029X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
DS
V
GS(th)
V
GS
= 0 V, I
D
= 10 µA
V
GS
= 0 V, I
D
= - 10 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 10 V
V
DS
= 50 V, V
GS
= 0 V
V
DS
= - 50 V, V
GS
= 0 V
V
DS
= 50 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 50 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= 10 V, V
GS
= 4.5 V
V
DS
= - 10 V, V
GS
= - 4.5 V
V
DS
= 7.5 V, V
GS
= - 4.5 V
V
DS
= - 10 V, V
GS
= - 10 V
V
GS
= 4.5 V, I
D
= 200 mA
V
GS
= - 4.5 V, I
D
= - 25 mA
V
GS
= 10 V, I
D
= 500 mA
V
GS
= - 10 V, I
D
= - 500 mA
V
GS
= 10 V, I
D
= 500 mA, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 500 mA, T
J
= 125 °C
V
DS
= 10 V, I
D
= 200 mA
V
DS
= - 10 V, I
D
= - 100 mA
I
S
= 200 mA, V
GS
= 0 V
I
S
= - 200 mA, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
60
- 60
1
-1
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Zero Gate Voltage Drain Current
I
DSS
2.5
- 3.0
± 50
± 100
± 150
± 200
10
- 25
100
- 250
V
nA
On-State Drain Current
a
I
D(on)
500
- 50
800
- 600
3
8
1.40
4
2.50
6
200
100
1.4
- 1.4
750
1700
75
260
225
460
30
23
6
10
3
5
15
20
mA
Drain-Source On-State
Resistance
a
R
DS(on)
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g
fs
V
SD
ms
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
ON
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 250 mA
P-Channel
V
DS
= - 30 V, V
GS
= - 15 V, I
D
= - 500 mA
pC
N-Channel
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
N-Channel
V
DD
= 30 V, R
L
= 150
I
D
200 mA, V
GEN
= 10 V, R
g
= 10
P-Channel
V
DD
= - 25 V, R
L
= 150
I
D
- 165 mA, V
GEN
= - 10 V, R
g
= 10
pF
Turn-On Time
c
ns
20
35
Turn-Off Time
c
t
OFF
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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