b. Pulse width limited by maximum junction temperature.
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
ESD
450
280
145
- 55 to 150
2000
320
230
- 650
380
250
130
mW
°C
V
5s
60
± 20
305
220
mA
Steady State
Unit
V
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
1
Si1026X
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 10 µA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
= ± 10 V
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= 10 V, V
GS
= 4.5 V
V
DS
= 7.5 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 200 mA
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
b, c
Turn-On Time
Turn-Off Time
t
(on)
t
(off)
V
DD
= 30 V, R
L
= 150
I
D
= 200 mA, V
GEN
= 10 V, R
g
= 10
15
20
ns
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
V
DS
= 10 V, I
D
= 250 mA, V
GS
= 4.5 V
600
120
225
30
6
3
pF
pC
R
DS(on)
g
fs
V
SD
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 10 V, I
D
= 500 mA, T
J
= 125 °C
V
DS
= 10 V, I
D
= 200 mA
V
GS
= 0 V, I
S
= 200 mA
200
1.40
500
800
3.0
1.40
2.50
mS
V
60
1
2.5
± 150
± 50
1
10
mA
V
nA
µA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71434.
www.vishay.com
4
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
Package Information
Vishay Siliconix
SC89: 6 LEADS (SOT 563F)
2
3
D
E1/2
4
aaa
C
e1
A
2X
4
D
B
E/2
E
2
3
E1
2X
aaa
C
5
1
2
3
2X
bbb
C
e
B
4
6X b
ccc
M
C
A–B D
A1
L1
L
A
A1
SEE DETAIL “A”
MILLIMETERS
Dim
A
A1
b
c
D
E
E1
e
e1
L
L1
Min
0.56
0.00
0.15
0.10
1.50
1.55
Max
0.60
0.10
0.30
0.18
1.70
1.70
NOTES:
1.
2.
2
Dimensions in millimeters.
Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
Datums A, B and D to be determined 0.10 mm from the lead tip.
Terminal numbers are shown for reference only.
These dimensions apply to the flat section of the lead between
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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