Si3552DV
New Product
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
r
DS(on)
(W)
0.105 @ V
GS
= 10 V
0.175 @ V
GS
= 4.5 V
I
D
(A)
"2.5
"2.0
"1.8
"1.2
P-Channel
–30
0.200 @ V
GS
= –10 V
0.360 @ V
GS
= –4.5 V
D
1
S
2
TSOP-6
Top View
G1
1
6
D1
G
2
3 mm
S2
2
5
S1
G
1
G2
3
4
D2
2.85 mm
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
"20
"2.5
"2.0
"8
1.05
1.15
P-Channel
–30
"20
"1.8
"1.2
"7
–1.05
Unit
V
A
W
0.73
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t
v
5 sec
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com
S
FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJL
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
2-1
Si3552DV
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –24 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= –5 V, V
GS
= –10 V
V
GS
= 10 V, I
D
= 2.5 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –10 V, I
D
= –1.8 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= –4.5 V, I
D
= –1.2 A
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 2.5 A
V
DS
= –15 V, I
D
= –1.8 A
I
S
= 1.05 A, V
GS
= 0 V
I
S
= –1.05 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
A
–5
0.085
0.165
0.140
0.298
4.3
S
2.4
0.81
–0.83
1.10
V
–1.10
0.105
0.200
0.175
0.360
W
1.0
V
–1.0
"100
"100
1
–1
5
–5
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
V
SD
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
N Ch
Channel
l
V
DS
= 15 V, V
GS
= 5 V, I
D
= 1.8 A
P-Channel
V
DS
= –15 V V
GS
= –5 V I
D
= –1.8 A
15 V,
5 V,
18
Gate-Drain Charge
Q
gd
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
Time
t
d(on)
N Ch
l
N-Channel
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –15 V R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1
10
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse R
R
Recovery Time
Ti
t
f
I
F
= 1.05 A, di/dt = 100 A/ms
I
F
= –1.05 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
2.1
2.4
0.7
nC
C
0.9
0.7
0.8
7
8
9
12
13
12
5
7
35
30
11
12
14
18
20
ns
18
8
11
60
60
3.2
3.6
Gate-Source Charge
Q
gs
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
Si3552DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 5 V
8
I D – Drain Current (A)
I D – Drain Current (A)
8
10
T
C
= –55_C
25_C
Vishay Siliconix
N-CHANNEL
Transfer Characteristics
6
4V
6
125_C
4
4
2
2V
0
0
1
2
3
4
5
3V
2
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.25
300
Capacitance
r DS(on)– On-Resistance (
W
)
0.20
C – Capacitance (pF)
250
C
iss
0.15
V
GS
= 4.5 V
200
V
GS
= 10 V
0.10
150
100
C
oss
50
C
rss
0
5
10
15
20
25
30
0.05
0
0
1
2
3
4
5
6
7
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
Gate Charge
1.8
1.6
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
–50
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 1.8 A
V
GS
= 10 V
I
D
= 2.5 A
6
4
2
0
0
1
2
3
4
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si3552DV
Vishay Siliconix
New Product
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.40
I
D
= 2 A
r
DS(on)
– On-Resistance (
W
)
0.32
I
D
= 2.5 A
0.24
I
S
– Source Current (A)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
T
J
= 150_C
1
0.16
T
J
= 25_C
0.08
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
6
V
GS(th)
Variance (V)
–0.0
Power (W)
8
Single Pulse Power (Junction-to-Ambient)
0.2
–0.2
4
–0.4
2
–0.6
–0.8
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
Si3552DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Vishay Siliconix
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 7 V
8
6
I D – Drain Current (A)
5V
6
I D – Drain Current (A)
25_C
6V
8
P-CHANNEL
Transfer Characteristics
T
C
= –55_C
4
125_C
4
4V
2
2V
0
0
1
2
3
4
5
3V
2
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
300
Capacitance
0.5
r DS(on)– On-Resistance (
W
)
C – Capacitance (pF)
240
C
iss
0.4
V
GS
= 4.5 V
180
0.3
V
GS
= 10 V
120
C
oss
60
C
rss
0.2
0.1
0
0
1
2
3
4
5
6
7
0
0
6
12
18
24
30
I
D
– Drain Current (A)
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
S
FaxBack 408-970-5600
2-5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
