d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ728DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 25 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 18 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 12.5 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 12.5 V, V
GS
= 10 V, I
D
= 15 A
Total Gate Charge
Q
g
V
DS
= 12.5 V, V
GS
= 10 V, I
D
= 20 A
Channel-1
V
DS
= 12.5 V, V
GS
= 4.5 V, I
D
= 15 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 12.5 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 12.5 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.2
0.2
890
2360
230
580
105
260
17
42.5
8.1
20.5
3
7.7
2.5
6.4
1
0.8
2
1.6
26
64
13
17
nC
pF
g
fs
V
DS
= 15 V, I
D
=18 A
V
DS
= 15 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
15
20
0.0063 0.0077
0.0029 0.0035
0.0088 0.0110
0.0039 0.0048
37
80
S
1
1
25
25
34
25
-5
- 5.4
2.2
2.2
± 100
± 100
1
1
5
5
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ728DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 12.5 V, R
L
= 1.25
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 12.5 V, R
L
= 1.25
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 10 A, V
GS
= 0 V
I
S
= 10 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
12
20
15
18
15
30
10
10
7
10
12
12
25
30
10
10
Max.
25
40
30
35
30
60
20
20
15
20
25
25
50
60
20
20
16
35
70
100
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.8
0.78
12
25
4
15
6.6
12.5
5.5
12.5
1.2
1.2
25
50
8
30
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ728DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 5 V
60
V
GS
= 4 V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
40
30
20
V
GS
= 3 V
10
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
16
20
12
T
C
= 25
°
C
8
4
T
C
= 125
°C
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0160
1200
Transfer Characteristics
0.0140
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1000
C
iss
0.0120
V
GS
= 4.5 V
0.0100
800
600
0.0080
V
GS
= 10 V
0.0060
400
C
oss
C
rss
200
0.0040
0
10
20
30
40
50
60
70
0
0
5
10
15
20
25
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 7.5 V
R
DS(on)
- On-Resistance
(Normalized)
1.6
I
D
= 18 A
1.4
Capacitance
V
GS
= 10 V
V
GS
= 4.5 V
1.2
6
V
DS
= 15 V
4
V
DS
= 24 V
1.0
2
0.8
0
0
3
6
9
12
15
18
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ728DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 18 A
T
J
= 150
°C
10
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.025
0.020
0.015
T
J
= 125
°C
1
T
J
= 25
°C
0.010
0.005
T
J
= 25
°C
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.2
50
On-Resistance vs. Gate-to-Source Voltage
2.0
40
1.8
Power (W)
V
GS(th)
(V)
30
1.6
I
D
= 250 μA
1.4
20
1.2
10
1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
1000
Limited by R
DS(on)
*
Single Pulse Power
100
I
D
- Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
T
A
= 25
°C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67694
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
随着阅读器与标签价格的降低和全球市场的扩大，射频标识 RFID(以下简称RFID)的应用与日俱增。标签既可由阅读器供电(无源标签)，也可以由标签的板上电源供电(半有源标签和有源标签)。由于亚微型无源 CMOS 标签的成本降低，库存和其他应用迅速增加。一些评估表明，随着无源标签的价格持续下降，几乎每一个售出产品的内部都将有一个 RFID 标签。由于无源 RFID 标签的重要性及其独特的工程实现...[详细]
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