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SB120-G

产品描述1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小52KB,共3页
制造商Comchip Technology
官网地址http://www.comchiptech.com/
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SB120-G概述

1 A, 20 V, SILICON, SIGNAL DIODE, DO-41

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Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SB120-G Thru. SB1100-G
Voltage: 20 to 100 V
Current: 1.0 A
RoHS Device
Features
-Low
drop down voltage.
-Metal-Semiconductor junction with guard ring
-High
surge current capability
-Silicon
epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
-Lead-free
part, meet RoHS requirements.
1.0(25.4) Min.
.107(2.7)
.080(2.0)
DO-41
.205(5.2)
.160(4.1)
Mechanical data
-Epoxy:
UL94-V0 rated flame retardant
-Case:
Molded plastic body DO-41
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
0.34grams
Dimensions in inches and (millimeter)
1.0(25.4) Min.
.034(0.86)
.028(0.70)
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Ratings at Ta=25°C unless otherwise noted.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
SB
120-G
20
14
20
SB
140-G
40
28
40
SB
145-G
45
30
45
SB
150-G
50
35
50
1.0
SB
160-G
60
42
60
SB
180-G
80
56
80
SB
1100-G
100
70
100
Unit
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
TL=110°C
I
FSM
V
F
30
A
V
mA
Maximum forward voltage at 1.0A
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
T
A
=100°C
0.50
0.5
0.70
0.85
I
R
10
C
J
R
θJA
R
θJL
T
J
T
STG
-55 to +125
-55 to +150
110
50.0
30.0
-55 to +150
80
5
30
Typical junction capacitance (Note 1)
Typical t
hermal resistance
(Note 2)
Operating junction temperature range
Storage temperature range
NOTES:
pF
°C/W
°C
°C
1.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
2. Thermal resistance junction to ambient and junction to lead.
REV:A
QW-BB040
Page 1
Comchip Technology CO., LTD.

 
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