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Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> SKT513F09DT

SKT513F09DT: 产品描述Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC,; 产品类别模拟混合信号IC 触发装置; 文件大小363KB，共8页; 制造商SEMIKRON; 官网地址http://www.semikron.com

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SKT513F09DT概述

Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC,

SKT513F09DT规格参数

参数名称	属性值
包装说明	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	FAST
标称电路换相断开时间	20 µs
配置	SINGLE
关态电压最小值的临界上升速率	500 V/us
最大直流栅极触发电流	250 mA
最大直流栅极触发电压	4 V
最大维持电流	400 mA
JEDEC-95代码	TO-200AC
JESD-30 代码	O-CEDB-N2
最大漏电流	100 mA
通态非重复峰值电流	11000 A
元件数量	1
端子数量	2
最大通态电流	510000 A
最高工作温度	125 °C
最低工作温度	-40 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	DISK BUTTON
认证状态	Not Qualified
最大均方根通态电流	1300 A
重复峰值关态漏电流最大值	100000 µA
断态重复峰值电压	900 V
重复峰值反向电压	900 V
表面贴装	YES
端子形式	NO LEAD
端子位置	END
触发设备类型	SCR

SKT513F09DT相似产品对比

	SKT513F09DT	SKT593F10DS	SKT593F11DS	SKT593F08DS	SKT593F09DS	SKT513F14DV	SKT513F11DT
描述	Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC,	Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AC,	Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element, TO-200AC,	Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC	Silicon Controlled Rectifier, 1500A I(T)RMS, 590000mA I(T), 900V V(DRM), 900V V(RRM), 1 Element, TO-200AC	Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AC	Silicon Controlled Rectifier, 1300A I(T)RMS, 510000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element, TO-200AC,
包装说明	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	FAST	FAST	FAST	FAST	FAST	FAST	FAST
标称电路换相断开时间	20 µs	15 µs	15 µs	15 µs	15 µs	30 µs	20 µs
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
关态电压最小值的临界上升速率	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
最大直流栅极触发电流	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
最大直流栅极触发电压	4 V	4 V	4 V	4 V	4 V	4 V	4 V
最大维持电流	400 mA	400 mA	400 mA	400 mA	400 mA	400 mA	400 mA
JEDEC-95代码	TO-200AC	TO-200AC	TO-200AC	TO-200AC	TO-200AC	TO-200AC	TO-200AC
JESD-30 代码	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
最大漏电流	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
通态非重复峰值电流	11000 A	13000 A	13000 A	13000 A	13000 A	11000 A	11000 A
元件数量	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
最大通态电流	510000 A	590000 A	590000 A	590000 A	590000 A	510000 A	510000 A
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大均方根通态电流	1300 A	1500 A	1500 A	1500 A	1500 A	1300 A	1300 A
重复峰值关态漏电流最大值	100000 µA	100000 µA	100000 µA	100000 µA	100000 µA	100000 µA	100000 µA
断态重复峰值电压	900 V	1000 V	1100 V	800 V	900 V	1400 V	1100 V
重复峰值反向电压	900 V	1000 V	1100 V	800 V	900 V	1400 V	1100 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	END	END	END	END	END	END	END
触发设备类型	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	-	1	1	1	1	-	-

SKT513F09DT

SKT513F09DT概述

SKT513F09DT规格参数

SKT513F09DT相似产品对比

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