Ordering number : ENA0444A
SB10015M
SANYO Semiconductors
DATA SHEET
SB10015M
Applications
•
Low IR Schottky Barrier Diode
15V, 1.0A Rectifier
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
Small switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
15
17
1.0
10
-
-55 to +150
-
-55 to +150
Unit
V
V
A
A
°C
°C
Package Dimensions
unit : mm (typ)
7019A-001
SB10015M-TL-E
2.0
0.25
3
2.1
1.6
0 to 0.02
0.15
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
SL
LOT No.
LOT No.
TL
1
0.25
0.65
2
0.3
Electrical Connection
3
0.85
0.07
1 : Anode
2 : No Contact
3 : Cathode
SANYO : MCPH3
1
2
http://www.sanyosemi.com/en/network/
90512 TKIM/N0106SB SYIM TC-00000266 No. A0444-1/6
SB10015M
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=0.1mA
IF=0.5A
IF=1.0A
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted in Cu-foiled area of
0.72mm
2
×0.03mm
on glass epoxy substrate
Conditions
Ratings
min
15
0.43
0.49
20
10
185
0.48
0.54
3
typ
max
Unit
V
V
V
μA
pF
ns
°C / W
trr Test Circuit
100mA 100mA
Duty
≤
10%
10mA
trr
Package
MCPH3
50Ω
10μs
100Ω
10Ω
--5V
Ordering Information
Device
SB10015M-TL-E
Shipping
3,000pcs./reel
memo
Pb Free
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IF -- VF
10000
1000
IR -- VR
Ta=150
°
C
125
°
C
100
°
C
75
°
C
Reverse Current, IR --
μA
Forward Current, IF -- A
100
10
1.0
0.1
0.01
0.001
50
°
C
25
°
C
0
°
C
--25
°
C
3
2
0.001
0
Ta=
1
50
°
C
125
°
100 C
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
0.01
7
5
0.0001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IT11204
0
2
4
6
8
10
12
14
16
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.7
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
1.2E--0.5
IT11205
PR(AV) -- VRM
Rectangular
wave
θ
(1)
(2) (4) (3)
0.6
360°
1.0E--0.5
0.5
Sine
wave
0.4
180°
0.3
360°
8.0E--0.6
(1)Rectangular wave
θ
=300
°
(2)Rectangular wave
θ
=240
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
VR
θ
360°
(1)
(2)
(3)
6.0E--0.6
Sine
wave
VR
180°
360°
4.0E--0.6
0.2
0.1
0
0
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
0.2
0.4
0.6
0.8
1.0
1.2
IT11206
(4)
2.0E--0.6
0.0E+00
0
2
4
6
8
10
12
14
16
Average Output Current, IO -- A
Peak Reverse Voltage, VRM -- V
IT11207
No. A0444-2/6
SB10015M
160
140
Tc -- IO
Interterminal Capacitance, C -- pF
Case Temperature, Tc --
°C
120
100
80
60
40
20
0
0
0.2
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
*When mounted in reliability
operaion board,
Rth(J-a)=183.67°C/W
5
3
2
C -- VR
100
7
5
3
2
Rectangular
wave
(4)
θ
360°
Sine
wave
180°
360°
0.4
0.6
(1)
(2)
(3)
0.8
1.0
1.2
IT11208
10
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
Average Output Current, IO -- A
14
IFSM -- t
Current waveform 50Hz sine wave
I
S
20ms
t
Reverse Voltage, VR -- V
IT10275
Surge Forward Current, IFSM(Peak) -- A
12
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID00435
No. A0444-3/6
SB10015M
Taping Specification
SB10015M-TL-E
No. A0444-4/6
SB10015M
Outline Drawing
SB10015M-TL-E
Mass (g) Unit
0.007 mm
* For reference
Land Pattern Example
Unit: mm
0.4
0.6
2.1
0.65 0.65
No. A0444-5/6
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