Ordering number : EN2981C
SB07-03P
SANYO Semiconductors
DATA SHEET
SB07-03P
Applications
•
Schottky Barrier Diode
30V, 700mA Rectifier
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
Fast reverse recovery time (trr max=10ns)
Low forward voltage (VF max=0.55V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
35
700
5
-
-55 to +125
-
-55 to +125
Unit
V
V
mA
A
°C
°C
Package Dimensions
unit : mm (typ)
7007B-001
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
SB07-03P-TD-E
Packing Type: TD
Marking
2.5
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Electrical Connection
0.75
1
2
3
1 : Anode
2 : Cathode
3 : No Contact
Bottom View
SANYO : PCP
http://semicon.sanyo.com/en/network
72512 TKIM/71504 TSIM TB-00000603/33098 HA (KT)/D288TA, TS No.2981-1/6
SD
LOT No.
SB07-03P
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=300μA
IF=700mA
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
310
When mounted on ceramic substrate (250mm
×0.8mm)
2
Conditions
Ratings
min
30
0.55
80
26
10
120
typ
max
Unit
V
V
μA
pF
ns
°C / W
°C / W
trr Test Circuit
100mA
Duty
≤
10%
10μs
--5V
100mA
50Ω
100Ω
10Ω
trr
Ordering Information
Device
SB07-03P-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
10mA
No.2981-2/6
SB07-03P
5
3
2
IF -- VF
5
2
1000
5
2
100
5
2
10
5
2
1.0
5
2
0.1
0
IR -- VR
5
°
C
Ta=12
Reverse Current, IR --
μA
Forward Current, IF -- A
1.0
7
5
3
2
100
°
C
75
°
C
50
°
C
25
°
C
25
°
C
Ta=
1
0.1
7
5
3
2
0.01
0
25
°
C
0.2
0.4
0.6
0.8
1.0
1.2
ID00393
5
10
15
20
25
30
35
ID00394
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
1.0
PF(AV) -- IO
Reverse Voltage, VR -- V
2
100
7
5
3
2
10
7
5
3
2
1.0
1.0
C -- VR
f=1MHz
0.8
0.6
Rectangular
wave
θ
360°
(4)
(2)
(3)
0.4
(1)
0.2
Sine wave
180°
0
0
0.2
0.4
0.6
0.8
360°
1.0
1.2
ID00395
Interterminal Capacitance, C -- pF
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
2
3
5
7
10
2
3
5
Average Forward Current, IO -- A
6
IFSM -- t
I
S
Reverse Voltage, VR -- V
7 100
ID00396
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
5
4
20ms
t
3
2
1
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID00397
No.2981-3/6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
