Ordering number : EN2999C
SB05-05P
SANYO Semiconductors
DATA SHEET
SB05-05P
Applications
•
Schottky Barrier Diode
50V, 500mA Rectifier
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
Fast reverse recovery time (trr max=10ns)
Low forward voltage (VF max=0.55V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
50
55
500
5
-
-55 to +125
-
-55 to +125
Unit
V
V
mA
A
°C
°C
Package Dimensions
unit : mm (typ)
7007B-001
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
SB05-05P-TD-E
Packing Type: TD
Marking
2.5
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Electrical Connection
0.75
1
2
3
1 : Anode
2 : Cathode
3 : No Contact
Bottom View
SANYO : PCP
http://semicon.sanyo.com/en/network
72512 TKIM/62005SB MSIM TB-00001395/33098 HA (KT)/92995 GI (KOTO)/D288 TA, TS No.2999-1/6
SB
LOT No.
SB05-05P
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=200μA
IF=500mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
310
When mounted on ceramic substrate (250mm
×0.8mm)
2
Conditions
Ratings
min
50
0.55
50
18
10
120
typ
max
Unit
V
V
μA
pF
ns
°C / W
°C / W
trr Test Circuit
100mA
Duty
≤
10%
10μs
--5V
100mA
50Ω
100Ω
10Ω
trr
Ordering Information
Device
SB05-05P-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
10mA
No.2999-2/6
SB05-05P
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
ID00349
2
2
0.1
0
10
20
30
40
50
60
70
ID00350
IF -- VF
5
2
1000
IR -- VR
°
C
Ta=125
100
°
C
75
°
C
50
°
C
Reverse Current, IR --
μA
Forward Current, IF -- A
5
2
100
5
2
10
5
2
1.0
5
25
°
C
2
=1
Ta
5
°
C
25
°
C
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- mW
600
PF(AV) -- IO
Reverse Voltage, VR -- V
C -- VR
f=1MHz
Interterminal Capacitance, C -- pF
500
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
Rectangular
wave
(2)
(1)
θ
360°
100
7
5
3
2
400
(4)
(3)
300
200
10
7
5
3
1.0
Sine wave
100
180°
0
0
100
200
300
400
360°
500
600
ID00351
2
3
5
7
10
2
3
5
Average Output Current, IO -- mA
7
IFSM -- t
I
S
Reverse Voltage, VR -- V
100
ID00352
7
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
6
20ms
5
t
4
3
2
1
0
7 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Time, t -- s
ID00353
No.2999-3/6
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