SB020 thru SB060
Vishay Semiconductors
formerly General Semiconductor
Miniature Schottky Barrier Rectifiers
Case Style MPG06
0.100 (2.54)
0.090 (2.29)
DIA
1.0 (25.4)
MIN.
ed e
end ang
Ext e R
tag
Features
ol
V
Reverse Voltage
20 to 60V
Forward Current
0.6A
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low power loss, high efficiency
• For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
• Guardring for overvoltage protection
0.125 (3.18)
0.115 (2.92)
Mechanical Data
Case:
Molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds 0.375” (9.5mm) lead length,
5lbs. (2.3kg) tension
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.0064oz., 0.181g
1.0 (25.4)
MIN.
0.025 (0.635)
0.023 (0.584)
DIA.
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at 0.375” (9.5mm) lead length (See Fig. 1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Typical thermal resistance
(2)
Operating junction temperature range
Storage temperature range
Symbol SB020
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
R
θJL
T
J
T
STG
(T
A
= 25°C unless otherwise noted)
A
= 25°C unless otherwise noted)
SB030
30
21
30
SB040
40
28
40
0.6
20
80
20
SB050
50
35
50
SB060
60
42
60
Unit
V
V
V
A
A
°C/W
20
14
20
–65 to +125
–65 to +150
–65 to +150
°C
°C
Electrical Characteristics
Maximum instantaneous
forward voltage at 0.6A
(1)
Maximum instantaneous reverse current
at rated DC blocking voltage
(1)
V
F
T
A
= 25°C
T
A
= 100°C
I
R
0.55
0.5
10
0.70
V
mA
5.0
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Thermal resistance junction to lead P.C.B. mounted 0.375” (9.5mm) lead length
Document Number 88714
11-Feb-02
www.vishay.com
1
SB020 thru SB060
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
0.8
25
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
Resistive or Inductive Load
0.375” (9.5mm) Lead Length
0.6
SB050 - SB060
0.4
20
15
10
SB020 - SB040
0.2
5
0
0
20
40
60
80
100
120
140
0
160
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Reverse Leakage Current
(µA)
10
10
Fig. 4 – Typical Reverse Leakage
Characteristics
Instantaneous Forward Current (A)
T
J
= 125°C
1
1
T
J
= 125°C
T
J
= 150°C
0.1
T
J
= 25°C
SB020 – SB040
SB050 & SB060
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
T
J
= 100°C
SB020 thru SB040
SB050 thru SB060
T
J
= 25°C
0
20
40
60
80
100
0.01
0.001
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
1000
100
Fig. 6 – Transient Thermal Impedance
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
10
100
1
10
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
t, Pulse Duration (sec.)
Document Number 88714
11-Feb-02
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
