PZTA94
Elektronische Bauelemente
RoHS Compliant Product
PNP Transistor
Epitaxial Planar
Transistor
Description
The PZTA94 is designed for application
requires high voltage.
SOT-223
Features
*High Current Gain: I
C
=300mA at 25 C
*High Voltage: V
CEO
=400V (min) at I
C
=1mA
*Complementary With PZTA44
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
o
A9 4
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
C
Parameter
Value
-400
-400
-6
-500
2
-55~+150
Units
V
V
V
mA
W
O
o
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
o
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
*V
CE
(sat)1
*V
CE
(sat)2
*V
CE
(sat)3
V
BE
(sat)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
Min
-400
-400
-6
-
-
-
-
-
-
-
40
50
45
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
Test Conditions
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-400V,I
E
=0
V
BE
=-6 V,I
C
=0
V
CE
=-400V,V
BE
=0
I
C
=- 1mA,I
B
=-0.1mA
I
C
=- 10mA,I
B
=-1 mA
I
C
=- 50mA,I
B
=-5 mA
I
C
=- 10mA,I
B
=-1 mA
V
CE
=-10V, I
C
=- 1 mA
V
CE
=-10 V, I
C
=- 10 mA
V
CE
=-10 V, I
C
=-50 mA
V
CE
=-10 V, I
C
=-100mA
*Pulse width
≦
380
µ
s, Duty Cycle
≦
2%
-100
-100
-500
-350
-500
-750
-750
-
Collector Saturation Voltage
Base Satruation Voltage
mV
DC Current Gain
300
-
-
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
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