CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C730Q8
Issued Date : 2009.07.02
Revised Date :
Page No. : 1/8
MTB12N03Q8
Description
BV
DSS
I
D
R
DSON(max)
30V
12A
11.5mΩ
The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Dynamic dv/dt rating
•
Repetitive Avalanche Rated
•
Pb-free Lead Plating and Halogen-free package
Symbol
MTB12N03Q8
Outline
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTB12N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C730Q8
Issued Date : 2009.07.02
Revised Date :
Page No. : 2/8
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=12A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25℃
Total Power Dissipation
T
A
=100℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
30
±20
12
10
48 *1
12
7.2
3.6 *2
3 *3
1.5
-55~+175
V
A
mJ
W
°C
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=10V, I
L
=15A, Rated V
DS
=25V N-CH
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
25
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
Dynamic
Ciss
Coss
Crss
MTB12N03Q8
Min.
30
1
-
-
-
-
12
-
-
-
-
-
Typ.
-
1.7
15
-
-
-
-
9.7
14.5
1060
190
145
Max.
-
3
-
±
100
1
25
-
11.5
18
-
-
-
Unit
V
V
S
nA
μA
A
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=12A
V
GS
=
±
20
V
DS
=24V, V
GS
=0
V
DS
=20V, V
GS
=0, T
J
=125°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
*1
*1
*1
pF
V
GS
=0V, V
DS
=15V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Qg (V
GS
=10V)
*1, 2
Qg (V
GS
=4.5V)
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
12
4.5
1.2
3.7
8
6
24
3
2
-
-
-
18
10
Max.
-
-
-
-
-
-
-
-
-
2.5
10
1.2
-
-
Unit
nC
Test Conditions
Spec. No. : C730Q8
Issued Date : 2009.07.02
Revised Date :
Page No. : 3/8
V
DS
=15V, V
GS
=10V, I
D
=12A
ns
Ω
V
DS
=15V, I
D
=1A, V
GS
=10V,
R
GS
=2.7Ω
V
GS
=15mV, V
DS
=0V, f=1MHz
A
V
ns
nC
I
F
=I
S
, V
GS
=0V
I
F
=I
S
, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB12N03Q8
Package
SOP-8
(Pb-free & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Marking
B12N03
MTB12N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C730Q8
Issued Date : 2009.07.02
Revised Date :
Page No. : 4/8
MTB12N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C730Q8
Issued Date : 2009.07.02
Revised Date :
Page No. : 5/8
MTB12N03Q8
CYStek Product Specification
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
