INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector–Emitter
Breakdown Voltage—
: V
(BR)CEO
= 60 V
·DC
Current Gain—
: h
FE
= 750(Min) @ I
C
= 2A
·Complement
to Type MJE701T
MJE801T
APPLICATIONS
·Designed
for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
60
60
5
4
0.1
50
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJE801T
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA; I
B
= 0
60
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
=2A; I
B
=40mA
2.8
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
=40mA
B
3.0
V
V
BE
(on)-1
Base-Emitter On Voltage
I
C
=2A
;
V
CE
=3V
2.5
V
V
BE
(on)-2
I
CEO
Base-Emitter On Voltage
I
C
= 4A
;
V
CE
= 3V
3.0
V
Collector Cutoff Current
V
CE
= 60V
;
I
B
= 0
V
CB
= 60V
;
I
E
= 0
V
CB
= 60V
;
I
E
= 0;T
C
= 100℃
V
EB
= 5V; I
C
= 0
0.1
0.1
0.5
2.0
mA
I
CBO
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
=2A ; V
CE
= 3V
750
h
FE-2
DC Current Gain
I
C
= 4A ; V
CE
= 3V
100
isc Website：www.iscsemi.cn
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