MJE710 MJE711
MJE720 MJE721
MJE712
MJE722
PNP
NPN
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE710, MJE720
series types are Complementary Silicon Power
Transistors designed for low power amplifier and
medium speed switching aplications.
COMPLEMENTARY SILICON
POWER TRANSISTORS
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
MJE710
MJE720
40
40
MJE711
MJE721
60
60
5.0
1.5
0.5
1.25
20
-65 to +150
100
6.25
MJE712
MJE722
80
80
UNITS
V
V
V
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V (TC=125°C)
ICEO
VCE=1/2 Rated VCEO
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
VEB=5.0V
IC=50mA (MJE710, MJE720)
IC=50mA (MJE711, MJE721)
IC=50mA (MJE712, MJE722)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.5A, IB=300mA
IC=1.5A, IB=300mA
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
IC=500mA
IC=150mA
IC=500mA
40
60
80
MAX
100
500
500
1.0
UNITS
μA
μA
μA
mA
V
V
V
V
V
V
V
V
0.15
0.4
1.0
1.3
0.95
40
20
8.0
VCE=1.0V, IC=1.0A
R1 (16-September 2008)
FPGA/CPLD
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