INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJE341
APPLICATIONS
·Useful
for medium voltage applications requiring high
f
T
such as converters and extended range amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
i
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
175
150
3
0.5
20
150
-65~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
6.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJE341
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 1.0mA; I
B
= 0
B
150
V
V
CE
(sat)
V
BE
(on)
I
CBO
I
CEO
Collector-Emitter Saturation Voltage
I
C
=150mA ;I
B
=15mA
2.3
V
Base-Emitter On Voltage
I
C
=50mA ; V
CE
= 10V
1.0
V
Collector Cutoff Current
V
CB
= 175V
;
I
E
= 0
V
CB
= 150V
;
I
E
= 0
0.3
mA
Collector Cutoff Current
1.0
mA
I
EBO
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
0.1
mA
h
FE-1
DC Current Gain
I
C
= 10m A ; V
CE
= 10V
20
h
FE-2
DC Current Gain
I
C
= 50m A ; V
CE
= 10V
25
200
h
FE-3
DC Current Gain
I
C
=150m A ; V
CE
= 10V
20
C
OB
f
T
Output Capacitance
I
E
= 0, V
CB
=20V; f= 0.1MHz
15
15
pF
Current Gain-Bandwidth Product
I
C
=50mA ;V
CE
=25V; f
test
=1MHz
MHz
isc Website：www.iscsemi.cn
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