INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
MJ21193
DESCRIPTION
·Total
Harmonic Distortion Characterized
·High
DC Current Gain
·High
Area of Safe Operation
APPLICATIONS
·Designed
for high power audio output, disk head positioners
and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulsed
Base Current-Continuous
Total Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
VALUE
-400
-250
-5
-16
-30
-5
250
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
P
D
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
ThermalResistance Junction To Case
VALUE
0.7
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Capacitance
Current Gain-Bandwidth Product
CONDITIONS
I
C
=-100mA; I
B
=0
B
MJ21193
MIN
-250
TYP.
MAX
UNIT
V
I
C
=-8A ;I
B
=-0.8A
B
-1.4
-4
-2.2
-0.1
-0.1
-100
25
8
500
4
75
V
V
V
mA
mA
μA
I
C
=-16A ;I
B
=-3.2A
I
C
=-8A ; V
CE
=-5V
V
CE
=-200V,I
B
=0
V
CE
= -250V; V
BE(off)
= -1.5V
V
EB
=-5V; I
C
=0
I
C
=-8A; V
CE
=-5V
I
C
=-16A; V
CE
=-5V
I
E
= 0; f=1MHz ; V
CB
=-10V
I
C
=-1A ;V
CE
=-10V; f
test
=1MHz
pF
MHz
isc Website：www.iscsemi.cn
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