INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 450V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line-operated switchmode applications.
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
·Motor
controls
·Deflection
circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CEV
V
CEO(SUS)
V
EBO
I
C
I
CM
I
B
B
MJ16002
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
850
450
6
5
10
4
8
125
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-
1
V
CE
(sat)-
2
V
BE
(sat)
I
CEV
I
CER
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
=1.5A; I
B
= 0.2A
I
C
= 3A; I
B
= 0.4A
I
C
= 3A; I
B
= 0.4A,T
C
=100℃
B
B
MJ16002
MIN
450
TYP.
MAX
UNIT
V
1.0
2.5
2.5
1.5
1.5
0.25
1.5
2.5
1.0
5
200
V
V
V
mA
mA
mA
I
C
= 3A; I
B
= 0.4A
I
C
= 3A; I
B
= 0.4A,T
C
=100℃
B
B
V
CEV
=850V;V
BE
(off)
=1.5V
V
CEV
=850V;V
BE
(off)
=1.5V;T
C
=100℃
V
CE
= 850V; R
BE
= 50Ω,T
C
= 100℃
V
EB
= 6V; I
C
=0
I
C
= 5A ; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
=1.0kHz
pF
Switching times;Resistive Load
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 3A , V
CC
= 250V; R
B2
= 8Ω;
I
B1
= 0.4A; I
B2
= 0.8A;PW= 30μs;
Duty Cycle≤2.0%
30
100
1000
60
100
300
3000
300
ns
ns
ns
ns
isc Website：www.iscsemi.cn
2
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