INCHANGE Semiconductor
isc
Product Specification
MJ15011
isc
Silicon NPN Power Transistor
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-
: h
FE
= 20(Min.)@I
C
= 2A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 2.5V(Max)@ I
C
= 4A
·Complement
to Type MJ15012
APPLICATIONS
·Designed
for high power audio, disk head positioners , and
other linear applications. These devices can also be used
in power switching circuits such as relay or solenoid drivers,
DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEO(SUS)
V
CEX
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Emitter Current-Continuous
Emitter Current-Peak
Total Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
250
250
5
10
15
2
5
-12
-20
200
200
-65~200
UNIT
V
V
V
A
A
A
A
A
A
W
℃
℃
I
BM
I
E
I
EM
P
D
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
MJ15011
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A ;I
B
= 0
B
250
V
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)
I
CEO
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.2A
B
0.8
V
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.4A
B
2.5
V
Base-Emitter On Voltage
I
C
= 4A ; V
CE
= 2V
V
CE
= 200V; I
B
= 0
2.0
V
Collector Cutoff Current
1.0
mA
I
CEX
Collector Cutoff Current
V
CE
= 250V;V
BE(
off
)
= 1.5V
V
EB
= 5V; I
C
= 0
0.5
mA
I
EBO
Emitter Cutoff Current
0.5
mA
h
FE-1
DC Current Gain
I
C
= 2A ; V
CE
= 2V
20
100
h
FE-2
DC Current Gain
I
C
= 4A ; V
CE
= 2V
5
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V; f
test
= 1.0MHz
750
pF
isc Website：www.iscsemi.cn
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