MJW21195 (PNP)
MJW21196 (NPN)
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
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•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain
−
h
FE
= 20 Min @ I
C
= 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
Pb−Free Packages are Available*
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
Collector Current
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
250
400
5.0
400
16
30
5.0
200
1.43
−
65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
1
2
3
TO−247
CASE 340L
MARKING DIAGRAM
Adc
W
W/°C
°C
MJW2119x
AYWWG
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
0.7
40
Unit
°C/W
°C/W
x
A
Y
WW
G
1 BASE
3 EMITTER
2 COLLECTOR
= 5 or 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
≤
10%.
ORDERING INFORMATION
Device
MJW21195
MJW21195G
MJW21196
MJW21196G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−247
TO−247
(Pb−Free)
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
30 Units/Rail
30 Units/Rail
©
Semiconductor Components Industries, LLC, 2010
March, 2010
−
Rev. 3
1
Publication Order Number:
MJW21195/D
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current (V
CE
= 200 Vdc, I
B
= 0)
Emitter Cutoff Current (V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
Base−Emitter On Voltage (I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
20
8
−
−
−
−
−
−
−
−
80
−
2.0
1.0
3
Vdc
Vdc
I
S/b
4.0
2.25
−
−
−
−
Adc
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
−
100
50
50
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typical
Max
Unit
V
BE(on)
V
CE(sat)
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MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
FT, CURRENT BANDWIDTH PRODUCT (MHz)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 5 V
V
CE
= 10 V
FT, CURRENT BANDWIDTH PRODUCT (MHz)
6.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.1
NPN MJW21196
V
CE
= 10 V
V
CE
= 5 V
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
PNP MJW21195
1000
1000
Figure 2. Typical Current Gain
Bandwidth Product
NPN MJW21196
h FE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
PNP MJW21195
1000
1000
Figure 4. DC Current Gain, V
CE
= 20 V
NPN MJW21196
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 5 V
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
100
T
J
= 100°C
25°C
- 25°C
V
CE
= 5 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
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Figure 6. DC Current Gain, V
CE
= 5 V
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
30
2.0 A
IC , COLLECTOR CURRENT (A)
1.5 A
1.0 A
I
B
= 0.5 A
IC , COLLECTOR CURRENT (A)
25
20
15
10
5.0
T
J
= 25°C
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
30
25
20
I
B
= 0.5 A
15
10
5.0
T
J
= 25°C
NPN MJW21196
2.0 A
1.5 A
1.0 A
Figure 7. Typical Output Characteristics
PNP MJW21195
3.0
1.4
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
V
CE(sat)
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0
0.1
V
BE(sat)
SATURATION VOLTAGE (VOLTS)
T
J
= 25°C
I
C
/I
B
= 10
1.2
1.0
0.8
0.6
0.4
Figure 8. Typical Output Characteristics
NPN MJW21196
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
V
CE(sat)
0.2
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJW21195
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
10
T
J
= 25°C
NPN MJW21196
1.0
1.0
V
CE
= 20 V
V
CE
= 5 V
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
= 20 V
V
CE
= 5 V
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
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MJW21195 (PNP) MJW21196 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
TYPICAL CHARACTERISTICS
PNP MJW21195
100
I
C
, COLLECTOR CURRENT (AMPS)
100
I
C
, COLLECTOR CURRENT (AMPS)
NPN MJW21196
10 ms
10
1 Sec
1
100 ms
10 ms
10
1 Sec
100 ms
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
10000
C
ib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
10000
C
ib
1000
C
ob
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
1000
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
C
ob
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW21195 Typical Capacitance
Figure 16. MJW21196 Typical Capacitance
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