电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MJW18020_10

产品描述30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD
产品类别半导体    分立半导体   
文件大小105KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

MJW18020_10概述

30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD

30 A, 450 V, NPN, 硅, 功率晶体管, TO-247AD

MJW18020_10规格参数

参数名称属性值
端子数量3
晶体管极性NPN
最大集电极电流30 A
最大集电极发射极电压450 V
加工封装描述LEAD FREE, CASE 340L-02, TO-247, 3 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸FLANGE MOUNT
端子形式THROUGH-HOLE
端子涂层MATTE TIN
端子位置SINGLE
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接COLLECTOR
元件数量1
晶体管应用SWITCHING
晶体管元件材料SILICON
晶体管类型GENERAL PURPOSE POWER
最小直流放大倍数5.5
额定交叉频率13 MHz

文档预览

下载PDF文档
MJW18020
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Features
http://onsemi.com
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters t
si
and t
fi
Very Stable Leakage Current due to the Planar Structure
High Reliability
Pb−Free Package is Available*
30 AMPERES
1000 VOLTS BV
CES
450 VOLTS BV
CEO,
250 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak (Note 1)
Base Current
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
D
T
J
, T
stg
Value
450
1000
1000
9.0
30
45
6.0
10
250
2.0
−65
to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
1
2
3
TO−247
CASE 340L
MARKING DIAGRAM
MJW18020
AYWWG
Total Power Dissipation @ T
C
= 25_C
Derate Above 25_C
Operating and Storage Junction
Temperature Range
1 BASE
3 EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
0.5
50
275
Unit
_C/W
_C/W
_C
A
Y
WW
G
2 COLLECTOR
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
10%.
ORDERING INFORMATION
Device
MJW18020
MJW18020G
Package
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. 3
1
Publication Order Number:
MJW18020/D

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2914  1770  1077  2758  1816  59  36  22  56  37 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved