SO
8
KMZ49
Magnetic field sensor
Rev. 1 — 31 October 2011
Product data sheet
1. Product profile
1.1 General description
The KMZ49 is a sensitive magnetic field sensor, employing the magnetoresistive effect of
thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at a
relative angle of 45 to each other.
A rotating magnetic field in the x-y plane will produce two independent sinusoidal output
signals, one a function of +cos(2) and the second a function of +sin(2),
being the
angle between sensor and field direction (see
Figure 2).
The KMZ49 is suited to high
precision angle measurement applications under low field conditions (saturation field
strength 25 kA/m).
The sensor can be operated at any frequency between 0 Hz and 1 MHz.
1.2 Features and benefits
Accurate and reliable angle measurement
Mechanical robustness, contactless principle
Wear-free operation
Accuracy independent of mechanical tolerances
Extended temperature range
1.3 Applications
Steering angle and torsion
Headlight adjustment
Motor positioning
Window wipers
Fuel level
Mirror positioning
NXP Semiconductors
KMZ49
Magnetic field sensor
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C; H
ext
= 25 kA/m; V
CC
= 5 V; unless otherwise specified.
Symbol
V
CC
V
M
V
offset
Parameter
supply voltage
peak voltage
offset voltage
see
Figure 2
per supply voltage;
see
Figure 2
per supply voltage;
T
amb
=
40 C
to +150
C;
see
Figure 2
Conditions
[1]
[1][2]
[1]
Min
-
60
2
2
Typ
5
67
-
-
Max
9
75
+2
+2
Unit
V
mV
mV/V
(V/V)/K
TC
V(offset)
offset voltage
temperature
coefficient
R
bridge
[1]
[2]
[3]
[4]
[1][3]
bridge resistance
[1][4]
2.7
3.2
3.7
k
Applicable for bridge 1 and bridge 2.
V
M
=
V
O(max)
V
offset
.
Periodicity of V
M
: sin(2) and cos(2), respectively.
V
offset
at 150
C
–
V
offset
at
–
40
C
-
TC
V
offset
=
-------------------------------------------------------------------------------------------------
150
C
–
–
40
C
Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
ON1
ON2
V
CC2
V
CC1
OP1
OP2
GND2
GND1
Pinning
Description
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
ground 2
ground 1
1
4
8
5
Symbol
Simplified outline
3. Ordering information
Table 3.
Ordering information
Package
Name Description
KMZ49
SO8
plastic small outline package; 8 leads; body width 3.9 mm
Version
SOT96-1
Type number
KMZ49
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 31 October 2011
2 of 13
NXP Semiconductors
KMZ49
Magnetic field sensor
4. Circuit diagram
KMZ49
R11
bridge 1
bridge 2
cos
R12
R21
sin
R22
R13
R14
R23
R24
V
CC1
OP1
GND1
V
O1
V
ON1
OP2
GND2
V
O2
V
ON2
V
CC2
V
CC1
V
V
OP1
V
ON1
V
V
V
OP2
V
V
ON2
V
CC2
008aaa267
Fig 1.
Device and test circuit diagram
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
H
ext
T
amb
T
stg
[1]
Parameter
supply voltage
external magnetic field strength
ambient temperature
storage temperature
Conditions
[1]
Min
-
25
40
65
Max
9
-
Unit
V
kA/m
+150
C
+150
C
Applicable for bridge 1 and bridge 2.
6. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
Typ
155
Unit
K/W
KMZ49
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 31 October 2011
3 of 13
NXP Semiconductors
KMZ49
Magnetic field sensor
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
C; H
ext
= 25 kA/m; V
CC
= 5 V; unless otherwise specified.
Symbol
V
CC
V
M
TC
VM
R
bridge
TC
R(bridge)
V
offset
TC
V(offset)
Parameter
supply voltage
peak voltage
peak voltage temperature
coefficient
bridge resistance
bridge resistance
temperature coefficient
offset voltage
offset voltage temperature
coefficient
hysteresis output voltage
amplitude synchronism
amplitude synchronism
temperature coefficient
angular inaccuracy
Applicable for bridge 1 and bridge 2.
V
M
=
V
O(max)
V
offset
.
Periodicity of V
M
: sin(2) and cos(2), respectively.
Conditions
[1]
Min
-
60
0.3
2.7
0.24
2
2
[1][2]
[1][3]
Typ
5
67
0.36
3.2
0.26
-
-
Max
9
75
0.42
3.7
0.29
+2
+2
Unit
V
mV
%/K
k
%/K
mV/V
(V/V)/K
see
Figure 2
T
amb
=
40 C
to +150
C
[1][4]
T
amb
=
40 C
to +150
C
per supply voltage;
see
Figure 2
per supply voltage;
T
amb
=
40 C
to +150
C;
see
Figure 2
see
Figure 3
T
amb
=
40 C
to +150
C
[1][5]
[1]
[1][6]
V
o(hys)
k
TC
k
[1]
[2]
[3]
[4]
[5]
[1][7]
[8]
[9]
0
99.5
0.01
0
0.05
100
0
0.05
0.18
100.5
+0.01
0.1
%FS
%
%/K
deg
[10]
V
M
at 150
C
–
V
M
at
–
40
C
-
TC
VM
=
--------------------------------------------------------------------------------------------
V
M
at 25
C
150
C
–
–
40
C
Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.
R
bridge
at 150
C
–
R
bridge
at
–
40
C
-
TC
R
bridge
=
------------------------------------------------------------------------------------------------------
R
bridge
at 25
C
150
C
–
–
40
C
V
offset
at 150
C
–
V
offset
at
–
40
C
-
TC
V
offset
=
-------------------------------------------------------------------------------------------------
150
C
–
–
40
C
V
O1
67.5
135
45
–
V
O1
67.5
45
135
V
o
hys
1
=
---------------------------------------------------------------------------------------------------------------------------
2
V
M1
V
O2
22.5
90
0
–
V
O2
22.5
0
90
V
o
hys
2
=
---------------------------------------------------------------------------------------------------------------
2
V
M2
[6]
[7]
[8]
V
M1
-
k
=
---------
V
M2
k
at 150
C
–
k
at
–
40
C
-
TC
k
=
---------------------------------------------------------------------------------------
k
at 25
C
150
C
–
–
40
C
[9]
[10]
=
real
–
meas
; V
offset
= 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics,
calculated from the third and fifth harmonics of the spectrum V
O
. For definition of
see
Figure 2.
KMZ49
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 31 October 2011
4 of 13
NXP Semiconductors
KMZ49
Magnetic field sensor
V
O
(mV)
V
O2
α
= 0°
α
ON1
0
ON2
V
CC2
V
CC1
V
O1
direction of
magnetic field
V
M2
V
offset2
GND1
GND2
OP2
OP1
0
90
180
270
α
(deg)
360
008aaa269
Fig 2.
Output signals related to the direction of the magnetic field
008aaa266
V
O
(mV)
V
o(hys)2
0
V
O1
V
O2
V
o(hys)1
0
45
90
α
(deg)
135
Fig 3.
Definition of hysteresis
KMZ49
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 31 October 2011
5 of 13
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