KMZ43T
Magnetic field sensor
Rev. 05 — 4 March 2009
Product data sheet
1. Product profile
1.1 General description
The KMZ43T is a sensitive magnetic field sensor, employing the magnetoresistive effect
of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at
a relative angle of 45° to one another.
A rotating magnetic field in the x-y plane will produce two independent sinusoidal output
signals, one a function of +cos(2α) and the second a function of +sin(2α),
α
being the
angle between sensor and field direction (see
Figure 2).
The KMZ43T is suited to high
precision angle measurement applications under low field conditions (saturation field
strength 25 kA/m).
The sensor can be operated at any frequency between 0 Hz and 1 MHz.
1.2 Features
I
I
I
I
I
Accurate and reliable angle measurement
Mechanical robustness, contactless principle
Wear-free operation
Accuracy independent of mechanical tolerances
Extended temperature range
1.3 Applications
I
Steering angle and torsion
I
Headlight adjustment
I
Motor positioning
I
Window wipers
I
Fuel level
I
Mirror positioning
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C and H
ext
= 25 kA/m; V
CC
= 5 V; unless otherwise specified.
Symbol
V
CC
V
peak
V
offset
R
bridge
[1]
[2]
Parameter
supply voltage
peak output voltage
offset voltage
bridge resistance
Conditions
[1]
Min
-
60
−2
2.7
[1]
[1]
Typ
5
67
-
3.2
Max
9
75
+2
3.7
Unit
V
mV
mV/V
kΩ
see
Figure 2
per supply voltage;
see
Figure 2
[1][2]
Applicable for bridge 1 and bridge 2.
Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.
NXP Semiconductors
KMZ43T
Magnetic field sensor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
ON1
ON2
V
CC2
V
CC1
OP1
OP2
GND2
GND1
Pinning
Description
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
ground 2
ground 1
1
4
8
5
Symbol
Simplified outline
3. Ordering information
Table 3.
Ordering information
Package
Name Description
KMZ43T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
Version
SOT96-1
Type number
4. Circuit diagram
KMZ43T
R11
bridge 1
bridge 2
cos
R12
R21
sin
R22
R13
R14
R23
R24
V
CC1
OP1
GND1
V
O1
V
ON1
OP2
GND2
V
O2
V
ON2
V
CC2
V
CC1
V
V
OP1
V
ON1
V
V
V
OP2
V
V
ON2
V
CC2
008aaa100
Fig 1.
Device and test circuit diagram
KMZ43T_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 4 March 2009
2 of 8
NXP Semiconductors
KMZ43T
Magnetic field sensor
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
H
ext
T
amb
T
stg
[1]
Parameter
supply voltage
external magnetic field strength
ambient temperature
storage temperature
Conditions
[1]
Min
-
25
−40
−65
Max
9
-
Unit
V
kA/m
+150
°C
+150
°C
Applicable for bridge 1 and bridge 2.
6. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
Typ
155
Unit
K/W
KMZ43T_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 4 March 2009
3 of 8
NXP Semiconductors
KMZ43T
Magnetic field sensor
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
°
C and H
ext
= 25 kA/m; V
CC
= 5 V; unless otherwise specified.
Symbol
V
CC
V
peak
TC
Vpeak
R
bridge
TC
Rbridge
V
offset
TC
Voffset
Parameter
supply voltage
peak output voltage
see
Figure 2
temperature coefficient of peak T
amb
=
−40 °C
to +150
°C
output voltage
bridge resistance
temperature coefficient of
bridge resistance
offset voltage
temperature coefficient of
offset voltage
hysteresis of output voltage
amplitude synchronism
temperature coefficient of
amplitude synchronism
angular inaccuracy
Applicable for bridge 1 and bridge 2.
Conditions
[1]
[1]
[1][2]
Min
-
60
−0.3
2.7
0.24
−2
−4
Typ
5
67
−0.36
3.2
0.26
-
-
Max
9
75
−0.42
3.7
0.29
+2
+4
Unit
V
mV
%/K
kΩ
%/K
mV/V
(µV/V)/K
[1][3]
T
amb
=
−40 °C
to +150
°C
per supply voltage;
see
Figure 2
per supply voltage;
T
amb
=
−40 °C
to +150
°C;
see
Figure 2
see
Figure 3
T
amb
=
−40 °C
to +150
°C
[1][4]
[1]
[1][5]
FH
k
TC
k
∆α
[1]
[2]
[3]
[4]
[1][6]
[7]
[8]
0
99.5
−0.01
0
0.05
100
-
0.05
0.18
100.5
+0.01
0.1
%FS
%
%/K
deg
[9]
V
peak
(
at 150
°C )
–
V
peak
(
at
–
40
°C )
TC
Vpeak
=
100
×
----------------------------------------------------------------------------------------------------
V
peak
(
at 25
°C ) × (
150
°C
–
(
–
40
°C ) )
Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.
R
bridge
(
at 150
°C )
–
R
bridge
(
at
–
40
°C )
TC
Rbridge
=
100
×
-------------------------------------------------------------------------------------------------------
-
R
bridge
(
at 25
°C ) × (
150
°C
–
(
–
40
°C ) )
V
offset
(
at 150
°C )
–
V
offset
(
at
–
40
°C )
TC
Voffset
=
---------------------------------------------------------------------------------------------------
-
150
°C
–
(
–
40
°C )
V
O1
(
67.5°
)135°→45°
–
V
O1
(
67.5°
)45°→135°
FH
1
=
100
×
-----------------------------------------------------------------------------------------------------------------------
-
2
×
V
peak1
V
O2
(
22.5°
)90°→0°
–
V
O2
(
22.5°
)0°→90°
FH
2
=
100
×
-----------------------------------------------------------------------------------------------------------
-
2
×
V
peak2
[5]
[6]
[7]
V
peak1
k
=
100
×
----------------
-
V
peak2
k
(
at 150
°C )
–
k
(
at
–
40
°C )
TC
k
=
100
×
----------------------------------------------------------------------------------------
k
(
at 25
°C ) × (
150
°C
–
(
–
40
°C ) )
∆α
=
α
real
–
α
meas
; V
offset
= 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics,
calculated from the third and fifth harmonics of the spectrum V
O
.
[8]
[9]
KMZ43T_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 4 March 2009
4 of 8
NXP Semiconductors
KMZ43T
Magnetic field sensor
V
O
(mV)
V
O2
α
= 0°
α
ON1
0
ON2
V
CC2
V
CC1
V
O1
direction of
magnetic field
V
peak2
V
offset2
GND1
GND2
OP2
OP1
mgu175
0
90
180
270
α
(deg)
360
Fig 2.
Output signals related to the direction of the magnetic field
006aaa530
V
O
(mV)
FH
2
0
FH
1
V
O1
V
O2
0
45
90
α
(deg)
135
Fig 3.
Definition of hysteresis
KMZ43T_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 4 March 2009
5 of 8
Microchip MCU
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