Data Sheet
Description
NPN Epitaxial
Planar Transistor
3
.037
.110
.060
2
3
1
Mechanical Dimensions
.016
FMBT1815
3
2
1
2
.115
.037
1
.043
.004
.016
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Total Device Dissipation FR-5 Board (Note1)
T
A
= 25
o
C
Junction and Storage Temperature
Electrical Characteristics @ 25
o
C
Characteristic
Collector - Emitter Breakdown Voltage
(I
C
= 1.0mA)
Collector - Base Breakdown Voltage
(I
C
= 0.1mA)
Emitter - Base Breakdown Voltage
(I
E
= 0.01mA)
Collector Cutoff Current
(V
CB
= 60V)
Emitter Cutoff Current
(V
EB
= 5.0V)
DC Current Gain
(I
C
= 2.0 mA, V
CE
= 6.0 V)*
(I
C
= 150 mA, V
CE
= 6.0 V)
Collector - Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 10 mA)
Base - Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 10 mA)
Current - Gain - Bandwidth Product
(I
C
= 1.0 mA, V
CE
= 10 V, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
* Classification of h
FE
Rank
Range
C4Y
120-240
C4G
200-400
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Symbol
V
BR(CEO)
V
BR(CBO)
V
BR(EBO)
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Value
50
60
5.0
150
125
-55 to 150
Min
50
60
5.0
---
---
Max
---
---
---
0.1
0.1
Units
V
V
V
mA
mW
o
C
Unit
V
V
V
µA
µA
---
120
25
---
---
80
---
600
---
0.25
1.0
---
3.5
Vdc
Vdc
MHz
pF
C4B
350-600
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