FM200TU-07A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
6-PACK High Power
MOSFET Module
100 Amperes/75 Volts
G
G
P
AB
R
AD
7
Q
H
K
A
D
F
L
AC
P
N
N
M
L
Z
AB
AE
X (11 PLACES)
J
1
B
E
S
AF
T
13
14
W
A
12
U
6
B
TC
MEASURED
POINT
V
Z
AA
M
Z
W
AA
M
Z
Y
V
U
C
Q
K
X
C
TERMINAL CODE
U
V
1 S
UP
2 S
VP
3 S
WP
P
4 S
UN
5 S
VN
A
(7) GUP
(1) SUP
U
(8) GVP
(2) SVP
V
(9) GWP
(3) SWP
W
(14)
(13)
6 S
WN
7 G
UP
8 G
VP
9 G
WP
10 G
UN
11 G
VN
12 G
WN
13 TH1
14 TH2
Description:
Powerex MOSFET Modules are
designed for use in low voltage
switching applications. Each
module consists of 6 MOSFET
switches with low R
ds(on)
and a
fast recovery body diode to yield
low loss. All components and
interconnects are isolated from
the heat sink baseplate. This
offers simplified system assembly
and thermal management.
Features:
£
Low E
SW(off)
and Low R
ds(on)
£
Super-Fast Recovery Free-
Wheel Diode
£
Thermistor for T
C
Sensing
£
Parallel Legs to make a Dual
Module at 3X the Rating
£
Positive Locking Connectors
£
Easy Bus Bar Layout Due to
Flow Through Power Design
Applications:
£
Forklift
£
Off road Electric Vehicle
£
Welder
£
UPS
£
Chopper
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
FM200TU-07A is a 75V (V
DSS
),
100 Ampere 6-Pack High Power
MOSFET Module.
Type
FM
B
(10) GUN
(4) SUN
N
(11) GVN
(5) SVN
(12) GWN
(6) SWN
Housing Type
Tyco Electronics P/N
A: 917354-1
B: 177898-1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
07/12 Rev. 1
Inches
4.33
3.54
1.38
3.82
3.15
3.27
0.26
0.48
0.51
0.65
0.63
1.26
0.35
0.45
0.16
Millimeters
110.0
90.0
35.0
97.0
80.0
83.0
6.5
12.0
12.9
16.5
16.0
32.0
8.8
11.5
4.0
Dimensions
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
AD
AE
AF
Inches
0.79
1.50
2.64
1.02
0.98
0.36
Dia. 0.25
Rad. 0.25
0.57
0.55
1.18
0.69
0.47
0.61
0.18
Millimeters
20.0
38.0
67.0
26.0
25.0
9.1
Dia. 6.5
Rad. 6.5
14.5
14.0
30.0
17.5
12.0
15.5
4.5
Current Rating
Amperes
100
V
DSS
Volts
75
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Ratings
Channel Temperature
Storage Temperature
Drain-Source Voltage (G-S Short)
Gate-Source Voltage (D-E Short)
Drain Current (T
C
= 25°C)
Peak Drain Current (Pulse)
Avalanche Current (L = 10µH, Pulse)
Source Current (T
C
= 25°C)**
Peak Source Current (Pulse)**
Maximum Power Dissipation (T
C
= 25°C, T
j
< 150°C)***
Maximum Peak Power Dissipation (T
C'
= 25°C, T
j
< 150°C)***
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
DSS
V
GSS
I
D(rms)
I
DM
I
DA
I
S(rms)
I
SM
P
D
P
D
—
—
—
V
ISO
FM200TU-07A
–40 to 150
–40 to 125
75
±20
100
200*
100*
100
200*
410
560
40
40
600
2500
Units
°C
°C
Volts
Volts
A
rms
Amperes
Amperes
A
rms
Amperes
Watts
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that device channel temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).
***T
C'
measured point is just under the chips. If you use this value, R
th(f-a)
should be measured just under the chips.
2
07/12 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Drain-Cutoff Current
Gate-Source Threshold Voltage
Gate Leakage Current
Static Drain-Source On-State Resistance
(Chip)
Static Drain-Source On-State Voltage
(Chip)
Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Source-Drain Voltage
R
lead
C
iss
C
oss
C
rss
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
SD
I
S
= 100A, V
GS
= 0V
V
DD
= 48V, I
D
= 100A,
V
GS1
= V
GS2
= 15V, R
G
= 13Ω,
Inductive Load Switching Operation,
I
S
= 100A
V
DD
= 48V, I
D
= 100A, V
GS
= 15V
V
DS
= 10V, V
GS
= 0V
V
DS(on)
Symbol
I
DSS
V
GS(th)
I
GSS
r
DS(on)
Test Conditions
V
DS
= V
DSS
, V
GS
= 0V
I
D
= 10mA, V
DS
= 10V
V
GS
= V
GSS
, V
DS
= 0V
I
D
= 100A, V
GS
= 15V, T
j
= 25°C
I
D
= 100A, V
GS
= 15V, T
j
= 125°C
I
D
= 100A, V
GS
= 15V, T
j
= 25°C
I
D
= 100A, V
GS
= 15V, T
j
= 125°C
I
D
= 100A, Terminal-Chip, T
j
= 25°C
I
D
= 100A, Terminal-Chip, T
j
= 125°C
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
6.0
—
1.2
1.92
0.12
0.192
1.2
1.68
—
—
—
700
—
—
—
—
—
2.0
—
Max.
1.0
7.3
1.5
1.65
—
0.165
—
—
—
50
7
4
—
450
400
600
400
200
—
1.3
Units
mA
Volts
µA
mΩ
mΩ
Volts
Volts
mΩ
mΩ
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
Volts
**Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).
07/12 Rev. 1
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Thermal Resistance, Channel to Case
Thermal Resistance, Channel to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c')
R
th(c-f)
Test Conditions
MOSFET part (1/6 Module)
T
C
Reference Point per Outline Drawing
MOSFET part (1/6 Module)
Measured Point is Just Under the Chips.
Per 1/6 Module, Thermal Grease Applied
—
0.1
—
°C/W
—
—
0.22
°C/W
Min.
—
Typ.
—
Max.
0.30
Units
°C/W
Thermistors Part
Characteristics
Resistance*
B Constant*
*B = (InR
1
– InR
2
) / (1/T
1
– 1/T
2
)
R
1
: Resistance at T
1
(K),
R
2
: Resistance at T
2
(K)
Symbol
R
th
B
Test Conditions
T
C
= 25°C
Resistance at 25°C, 50°C
Min.
—
—
Typ.
100
4000
Max.
—
—
Units
kΩ
K
4
07/12 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
FM200TU-07A
6-Pack High Power MOSFET Module
100 Amperes/75 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
15
DRAIN CURRENT, I
D
, (AMPERES)
200
V
GS
= 20V
12
10
DRAIN CURRENT, I
D
, (AMPERES)
150
150
100
9
100
50
T
j
= 25°C
50
V
DS
= 10V
T
j
= 25°C
T
j
= 125
o
C
0
0
0.2
0.4
0.6
0.8
1.0
0
5
7
9
11
13
15
DRAIN-SOURCE VOLTAGE, V
DS
, (VOLTS)
GATE-SOURCE, V
GS
, (VOLTS)
DRAIN-SOURCE ON-STATE VOLTAGE
VS. GATE BIAS CHARACTERISTICS
(TYPICAL )
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL - INVERTER PART)
1.00
DRAIN-SOURCE ON-STATE VOLTAGE,
V
DS(ON)
, (VOLTS)
T
j
= 25°C
SOURCE CURRENT, I
S
, (AMPERES)
10
3
0.75
V
GS
= 0V
T
j
= 25°C
T
j
= 125
o
C
0.50
I
D
= 200A
I
D
= 100A
I
D
= 50A
10
2
0.25
0
0
5
10
15
20
10
1
0.5
0.6
0.7
0.8
0.9
1.0
GATE-SOURCE VOLTAGE, V
GS
, (VOLTS)
SOURCE-DRAIN VOLTAGE, V
SD
, VOLTS)
07/12 Rev. 1
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
