FM120 THRU FM1200
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
•
Batch process design, excellent power dissipation offers
SMA-F
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. FM120-H.
•
•
•
•
•
•
•
•
•
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.068(1.7)
0.060(1.5)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, DO-214AC / SMA-F
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.032(0.8) Typ.
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
CONDITIONS
T
A
=25
o
C unless otherwise noted)
SYMBOL
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
I
O
I
FSM
I
R
C
J
T
STG
-65
120
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 100 C
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Diode junction capacitance
Storage temperature
mA
pF
+175
O
C
SYMBOLS
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
FM1150
FM1200
*1
V
RRM
(V)
20
30
40
50
60
80
100
150
200
V
RMS
*2
(V)
14
21
28
35
42
56
70
105
140
*3
V
R
(V)
20
30
40
50
60
80
100
150
200
*4
V
F
(V)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
-55 to +125
*2 RMS voltage
*3 Continuous reverse voltage
0.50
0.70
*4 Maximum forward voltage@I
F
=1.0A
0.85
0.90
0.92
-55 to +150
２０１４－０３ ０１版
½½½½：／／½½½．½½½½½½½½½½．½½½
Rating and characteristic curves (FM120 THRU FM1200)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
FM
0.6
0.4
0.2
0
0
20
40
60
80
FM
12
FM
0~
FM
15
0~
14
FM
0
16
0
10
3.0
1.0
LEAD TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
1
FM
0
15
100
20
M
~F
0
14
M1
~F
20
0
FM
0
18
M
~F
00
11
FM
0
12
0
120
140
160
180
200
50
11
M
F
~
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
T
J
=75 C
.1
T
J
=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
２０１４－０３ ０１版
½½½½：／／½½½．½½½½½½½½½½．½½½
FM120 THRU FM1200
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Symbol
1
2
1
2
Marking
Type number
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
FM1150
FM1200
Suggested solder pad layout
Marking code
SS12
SS13
SS14
SS15
SS16
SS18
S110
S115
S120
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMA
A
0.110 (2.80)
B
0.063 (1.60)
C
0.087 (2.20)
２０１４－０３ ０１版
½½½½：／／½½½．½½½½½½½½½½．½½½
FM120 THRU FM1200
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5
o
C ~40
o
C Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Tp
TP
Ramp-up
Critical Zone
TL to TP
TL
Tsmax
TL
Tsmin
Temperature
tS
Preheat
Ramp-down
25
t25
o
C to Peak
Time
3.Reflow soldering
Profile Feature
Average ramp-up rate(T
L
to T
P
)
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t
s
)
Tsmax to T
L
-Ramp-upRate
Time maintained above:
-Temperature(T
L
)
-Time(t
L
)
Peak Temperature(T
P
)
Time within 5
o
C of actual Peak
Temperature(t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
Soldering Condition
o
<3 C /sec
150
o
C
200
o
C
60~120sec
<3
o
C/sec
217
o
C
60~260sec
255
o
C-0/+5
o
C
10~30sec
<6
o
C/sec
<6minutes
２０１４－０３ ０１版
½½½½：／／½½½．½½½½½½½½½½．½½½
FM120 THRU FM1200
High reliability test capabilities
Item Test
1. Solder Resistance
Conditions
O
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16"±1/32"
Reference
MIL-STD-750D
METHOD-2031
MIL-STD-202F
METHOD-208
MIL-STD-750D
METHOD-1038
MIL-STD-750D
METHOD-1027
MIL-STD-750D
METHOD-1036
JESD22-A102
2. Solderability
at 245±5
O
C for 5 sec.
3. High Temperature Reverse Bias
V
R
=80% rate at T
J
=125
O
C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T
A
=25
O
C for 500hrs.
T
A
= 25
O
C, I
F
= I
O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
15P
SIG
at T
A
=121
O
C for 4 hrs.
-55
O
C to +125
O
C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
0
O
C for 5 min. rise to 100
O
C for 5 min. total 10 cycles.
5. Intermittent Operation Life
6. Pressure Cooker
7. Temperature Cycling
MIL-STD-750D
METHOD-1051
MIL-STD-750D
METHOD-1056
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
MIL-STD-750D
METHOD-1031
8. Thermal Shock
9. Forward Surge
8.3ms single half sine-wave superimposed
on rated load, one surge.
at T
A
=85
O
C, RH=85% for 1000hrs.
10. Humidity
11. High Temperature Storage Life
at 175
O
C for 1000 hrs.
２０１４－０３ ０１版
½½½½：／／½½½．½½½½½½½½½½．½½½
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
