BZX55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm, T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85605
Rev. 4, 01-Apr-99
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BZX55C...
Vishay Telefunken
Type
BZX55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
V
Znom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for V
ZT
and r
zjT
V
1)
W
2.28 to 2.56 < 85
2.5 to 2.9
< 85
2.8 to 3.2
< 85
3.1 to 3.5
< 85
3.4 to 3.8
< 85
3.7 to 4.1
< 85
4.0 to 4.6
< 75
4.4 to 5.0
< 60
4.8 to 5.4
< 35
5.2 to 6.0
<25
5.8 to 6.6
< 10
6.4 to 7.2
<8
7.0 to 7.9
<7
7.7 to 8.7
<7
8.5 to 9.6
< 10
9.4 to 10.6
< 15
10.4 to 11.6 < 20
11.4 to 12.7 < 20
12.4 to 14.1 < 26
13.8 to 15.6 < 30
15.3 to 17.1 < 40
16.8 to 19.1 < 50
18.8 to 21.2 < 55
20.8 to 23.3 < 55
22.8 to 25.6 < 80
25.1 to 28.9 < 80
28 to 32
< 80
31 to 35
< 80
34 to 38
< 80
37 to 41
< 90
40 to 46
< 90
44 to 50
< 110
48 to 54
< 125
52 to 60
< 135
58 to 66
< 150
64 to 72
< 200
70 to 79
< 250
r
zjk
at I
ZK
W
mA
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 550
1
< 450
1
< 200
1
< 150
1
< 50
1
< 50
1
< 50
1
< 70
1
< 70
1
< 90
1
< 110
1
< 110
1
< 170
1
< 170
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 500 0.5
< 600 0.5
< 700 0.5
< 700 0.5
< 1000 0.5
< 1000 0.5
< 1000 0.5
< 1500 0.5
I
R
and I
R
at V
R
m
A
m
A
2)
V
< 50
< 100
1
< 10
< 50
1
<4
< 40
1
<2
< 40
1
<2
< 40
1
<2
< 40
1
<1
< 20
1
< 0.5
< 10
1
< 0.1
<2
1
< 0.1
<2
1
< 0.1
<2
2
< 0.1
<2
3
< 0.1
<2
5
< 0.1
<2
6.2
< 0.1
<2
6.8
< 0.1
<2
7.5
< 0.1
<2
8.2
< 0.1
<2
9.1
< 0.1
<2
10
< 0.1
<2
11
< 0.1
<2
12
< 0.1
<2
13
< 0.1
<2
15
< 0.1
<2
16
< 0.1
<2
18
< 0.1
<2
20
< 0.1
<2
22
< 0.1
<2
24
< 0.1
<2
27
< 0.1
<5
30
< 0.1
<5
33
< 0.1
<5
36
< 0.1
< 10
39
< 0.1
< 10
43
< 0.1
< 10
47
< 0.1
< 10
51
< 0.1
< 10
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
Tighter tolerances available on request:
BZX55A...
±
1% of V
Znom
BZX55B...
±
2% of V
Znom
BZX55F...
±
3% of V
Znom
2)
at T
j
= 150
°
C
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Document Number 85605
Rev. 4, 01-Apr-99
BZX55C...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
500
V
Ztn
– Relative Voltage Change
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
400
300
l
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
l
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0
60
120
180
240
95 9611
95 9599
T
j
– Junction Temperature (
°C
)
Figure 1. Thermal Resistance vs. Lead Length
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
10
5
I
Z
=5mA
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
Figure 2. Total Power Dissipation vs.
Ambient Temperature
1000
95 9600
Figure 5. Temperature Coefficient of Vz vs. Z–Voltage
200
– Voltage Change ( mV )
T
j
= 25°C
100
C
D
– Diode Capacitance ( pF )
150
V
R
= 2V
100
T
j
= 25°C
I
Z
=5mA
10
D
V
Z
50
1
0
95 9598
5
10
15
20
25
95 9601
0
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 3. Typical Change of Working Voltage
under Operating Conditions at T
amb
=25
°
C
Figure 6. Diode Capacitance vs. Z–Voltage
Document Number 85605
Rev. 4, 01-Apr-99
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BZX55C...
Vishay Telefunken
100
I
F
– Forward Current ( mA )
50
P
tot
=500mW
T
amb
=25°C
T
j
= 25°C
1
I
Z
– Z-Current ( mA )
1.0
95 9607
10
40
30
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
20
10
0
15
20
25
30
35
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
100
r
Z
– Differential Z-Resistance (
W
)
1000
Figure 9. Z–Current vs. Z–Voltage
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
Figure 10. Differential Z–Resistance vs. Z–Voltage
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
R
thJA
=300K/W
D
T=T
jmax
–T
amb
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 11. Thermal Response
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Document Number 85605
Rev. 4, 01-Apr-99
BZX55C...
Vishay Telefunken
Dimensions in mm
Cathode Identification
∅
0.55 max.
technical drawings
according to DIN
specifications
94 9366
∅
1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
3.9 max.
26 min.
Document Number 85605
Rev. 4, 01-Apr-99
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