BZX384-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to
the international E24 standard
• Standard Zener voltage tolerance is ± 5 %;
replace “C” with “B” for ± 2 % tolerance
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Available
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZX384C2V4-E3-08 to BZX384C75-E3-08
BZX384B2V4-E3-08 to BZX384B75-E3-08
BZX384C2V4-HE3-08 to BZX384C75-HE3-08
BZX384-series
BZX384B2V4-HE3-08 to BZX384B75-HE3-08
BZX384C2V4-E3-18 to BZX384C75-E3-18
BZX384B2V4-E3-18 to BZX384B75-E3-18
BZX384C2V4-HE3-18 to BZX384C75-HE3-18
BZX384B2V4-HE3-18 to BZX384B75-HE3-18
10 000 (8 mm tape on 13" reel)
10 000/box
3000 (8 mm tape on 7" reel)
15 000/box
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOD-323
WEIGHT
4.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
TEST CONDITION
Device on fiberglass substrate
SYMBOL
P
tot
R
thJA
T
j
T
stg
T
op
VALUE
200
650
150
-65 to +150
-55 to +150
UNIT
mW
K/W
°C
°C
°C
Thermal resistance junction to ambient air
Valid that electrodes are kept at ambient temperature
Junction temperature
Storage temperature range
Operating temperature range
Rev. 2.2, 03-Nov-16
Document Number: 85764
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX384-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LAEKAGE
CURRENT
I
R
at V
R
μA
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
V
TYP.
70 (≤ 100)
75 (≤ 100)
80 (≤ 95)
85 (≤ 95)
85 (≤ 90)
85 (≤ 90)
80 (≤ 90)
50 (≤ 80)
40 (≤ 60)
15 (≤ 40)
6 (≤ 10)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
8 (≤ 20)
10 (≤ 20)
10 (≤ 25)
10 (≤ 30)
10 (≤ 30)
10 (≤ 40)
10 (≤ 45)
15 (≤ 55)
20 (≤ 55)
25 (≤ 70)
25 (≤ 80)
30 (≤ 80)
35 (≤ 80)
35 (≤ 90)
40 (≤ 130)
45 (≤ 150)
50 (≤ 170)
60 (≤ 180)
70 (≤ 200)
80 (≤ 215)
90 (≤ 240)
95 (≤ 255)
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
α
VZ
at I
ZT1
10
-4
/°C
TYP.
275
300 (≤ 600)
325 (≤ 600)
350 (≤ 600)
375 (≤ 600)
400 (≤ 600)
410 (≤ 600)
425 (≤ 500)
400 (≤ 480)
80 (≤ 400)
40 (≤ 150)
30 (≤ 80)
30 (≤ 80)
40 (≤ 80)
40 (≤ 100)
50 (≤ 150)
50 (≤ 150)
50 (≤ 150)
50 (≤ 170)
50 (≤ 200)
50 (≤ 200)
50 (≤ 225)
60 (≤ 225)
60 (≤ 250)
60 (≤ 250)
65 (≤ 300)
70 (≤ 300)
75 (≤ 325)
80 (≤ 350)
80 (≤ 350)
85 (≤ 375)
85 (≤ 375)
85 (≤ 400)
100 (≤ 425)
100 (≤ 450)
150 (≤ 475)
170 (≤ 500)
MIN.
- 9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
8
10
10
10
10
MAX.
- 4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
MARKING
CODE
MIN.
BZX384C2V4
BZX384C2V7
BZX384C3V0
BZX384C3V3
BZX384C3V6
BZX384C3V9
BZX384C4V3
BZX384C4V7
BZX384C5V1
BZX384C5V6
BZX384C6V2
BZX384C6V8
BZX384C7V5
BZX384C8V2
BZX384C9V1
BZX384C10
BZX384C11
BZX384C12
BZX384C13
BZX384C15
BZX384C16
BZX384C18
BZX384C20
BZX384C22
BZX384C24
BZX384C27
BZX384C30
BZX384C33
BZX384C36
BZX384C39
BZX384C43
BZX384C47
BZX384C51
BZX384C56
BZX384C62
BZX384C68
BZX384C75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
V
Z
at I
ZT1
V
NOM. MAX.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
TEST
CURRENT
I
ZT1
mA
I
ZT2
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Ω
Z
ZK
at I
ZT2
Rev. 2.2, 03-Nov-16
Document Number: 85764
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX384-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
0.7 V
Znom.
V
TYP.
70 (≤ 100)
75 (≤ 100)
80 (≤ 95)
85 (≤ 95)
85 (≤ 90)
85 (≤ 90)
80 (≤ 90)
50 (≤ 80)
40 (≤ 60)
15 (≤ 40)
6 (≤ 10)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
6 (≤ 15)
8 (≤ 20)
10 (≤ 20)
10 (≤ 25)
10 (≤ 30)
10 (≤ 30)
10 (≤ 40)
10 (≤ 45)
15 (≤ 55)
20 (≤ 55)
25 (≤ 70)
25 (≤ 80)
30 (≤ 80)
35 (≤ 80)
35 (≤ 90)
40 (≤ 130)
45 (≤ 150)
50 (≤ 170)
60 (≤ 180)
70 (≤ 200)
80 (≤ 215)
90 (≤ 240)
95 (≤ 255)
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
α
VZ
at I
ZT1
10
-4
/°C
TYP.
275
300 (≤ 600)
325 (≤ 600)
350 (≤ 600)
375 (≤ 600)
400 (≤ 600)
410 (≤ 600)
425 (≤ 500)
400 (≤ 480)
80 (≤ 400)
40 (≤ 150)
30 (≤ 80)
30 (≤ 80)
40 (≤ 80)
40 (≤ 100)
50 (≤ 150)
50 (≤ 150)
50 (≤ 150)
50 (≤ 170)
50 (≤ 200)
50 (≤ 200)
50 (≤ 225)
60 (≤ 225)
60 (≤ 250)
60 (≤ 250)
65 (≤ 300)
70 (≤ 300)
75 (≤ 325)
80 (≤ 350)
80 (≤ 350)
85 (≤ 375)
85 (≤ 375)
85 (≤ 400)
100 (≤ 425)
100 (≤ 450)
150 (≤ 475)
170 (≤ 500)
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
10
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
12
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
MARKING
CODE
MIN.
BZX384B2V4
BZX384B2V7
BZX384B3V0
BZX384B3V3
BZX384B3V6
BZX384B3V9
BZX384B4V3
BZX384B4V7
BZX384B5V1
BZX384B5V6
BZX384B6V2
BZX384B6V8
BZX384B7V5
BZX384B8V2
BZX384B9V1
BZX384B10
BZX384B11
BZX384B12
BZX384B13
BZX384B15
BZX384B16
BZX384B18
BZX384B20
BZX384B22
BZX384B24
BZX384B27
BZX384B30
BZX384B33
BZX384B36
BZX384B39
BZX384B43
BZX384B47
BZX384B51
BZX384B56
BZX384B62
BZX384B68
BZX384B75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
V
Z
at I
ZT1
V
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
TEST
CURRENT
I
ZT1
mA
I
ZT2
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Ω
Rev. 2.2, 03-Nov-16
Document Number: 85764
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX384-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Vishay Semiconductors
Ω
100
T
J
= 25 °C
5
4
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
0
18114
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
10
T
J
= 25 °C
5
4
3
2
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 -
Forward characteristics
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
250
Ω
10
3
7
T
j
= 25 °C
200
5
4
P
tot
150
R
zj
3
2
47 + 51
43
39
36
10
2
100
7
5
4
3
2
50
0
0
18192
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 -
Admissible Power Dissipation
vs.
Ambient Temperature
Fig. 5 -
Dynamic Resistance
vs.
Zener Current
Ω
1000
5
4
3
2
Ω
10
3
T
J
= 25 °C
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
r
zj
R
zth
100
5
4
3
2
10
2
5
4
3
2
10
5
4
3
2
10
2.7
3.6
4.7
5.1
5.6
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
Fig. 3 -
Dynamic Resistance
vs.
Zener Current
Fig. 6 -
Thermal Differential Resistance
vs.
Zener Voltage
Rev. 2.2, 03-Nov-16
Document Number: 85764
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX384-Series
www.vishay.com
Vishay Semiconductors
V
9
8
7
V
Z
at I
Z
= 2 mA
51
Ω
100
7
5
4
R
zj
3
2
Δ
V
Z
6
5
10
7
5
4
3
2
4
3
2
1
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
43
36
0
-1
0
18194
1
10
2
I
Z
= 2 mA
20
40
60
80 100 120
140 °C
3 4 5
100
V
18122
V
Z
T
j
Fig. 7 -
Dynamic Resistance
vs.
Zener Voltage
Fig. 10 -
Change of Zener Voltage
vs.
Junction Temperature
mV/°C
25
mV/°C
100
I
Z
= 5 mA
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
1
18135
2
3
4 5
I
Z
=
5 mA
1 mA
20 mA
Δ
V
Z
Δ
T
j
80
60
40
20
10
2
3 4 5
100
V
0
0
18195
V
Z
at I
Z
= 5 mA
V
≥
27
V,
I = 2 mA
20
40
60
80
100
V
V
Z
at I
Z
= 2 mA
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
Δ
V
Z
Δ
V
Z
= r
zth
x I
Z
I
Z
= 5 mA
V
Z
≥
27
V;
I
Z
= 2 mA
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
1
18196
2
3
4 5
20
40
60
80
100 120 140 C
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 12 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium
vs.
Zener Voltage
Rev. 2.2, 03-Nov-16
Document Number: 85764
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
