BY268.BY269
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
Applications
High voltage fast rectifier
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Peak reverse voltage, non repetitive
g
Reverse voltage
g
Peak forward surge current
Average forward current
Junction and storage temperature range
t
p
=10ms,
half sinewave
Test Conditions
Type
BY268
BY269
BY268
BY269
Symbol
V
RSM
V
RSM
V
R
V
R
I
FSM
I
FAV
T
j
=T
stg
Value
1600
1800
1400
1600
20
0.8
–65...+175
Unit
V
V
V
V
A
A
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board with spacing 25mm
Symbol
R
thJA
Value
110
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Test Conditions
Type
BY268
BY269
BY268
BY269
I
F
=0.4A
V
R
=1400V
V
R
=1600V
V
R
=1400V, T
j
=100
°
C
V
R
=1600V, T
j
=100
°
C
Reverse recovery time I
F
=0.5A, I
R
=1A, i
R
=0.25A
Symbol
V
F
I
R
I
R
I
R
I
R
t
rr
Min
Typ
1
1
Max
1.25
2
2
15
15
400
Unit
V
m
A
m
A
m
A
m
A
ns
Document Number 86005
Rev. 2, 24-Jun-98
www.vishay.de
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BY268.BY269
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
I
F
– Forward Current ( A )
100
80
60
l
40
20
0
0
5
10
15
T
L
=constant
20
25
30
94 9092
100
10
T
j
= 175°C
1
T
j
= 25°C
0.1
l
0.01
0
1
2
3
4
V
F
– Forward Voltage ( V )
94 9090
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
1000
Figure 3. Typ. Forward Current vs. Forward Voltage
12
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (
m
A )
Scattering Limit
100
10
8
6
4
2
0
f = 470 KHz
T
j
= 25°C
0.1
1
10
100
10
1
V
R
= V
R RM
0
40
80
120
160
200
0.1
94 9091
T
j
– Junction Temperature (
°C
)
94 9093
V
R
– Reverse Voltage ( V )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
94 9538
∅
3.6 max.
technical drawings
according to DIN
specifications
∅
0.82 max.
26 min.
4.2 max.
26 min.
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Document Number 86005
Rev. 2, 24-Jun-98
BY268.BY269
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86005
Rev. 2, 24-Jun-98
www.vishay.de
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